UTT75N75

UNISONIC TECHNOLOGIES CO., LTD UTT75N75 75A, 75V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics including fast switching speed and low thermal resistance. It is usually used in the telecom and computer applications.  FEATURES * RDS(ON) ≤ 10 mΩ @ VGS=10V, ID=37.5A RDS(ON) ≤ 20 mΩ @ VGS=4.5V, ID=37.5A * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT75N75L-TA3-T UTT75N75G-TA3-T UTT75N75L-TF3-T UTT75N75G-TF3-T UTT75N75L-TN3-R UTT75N75G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F TO-252 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tape Reel  MARKING www.unisonic.com.tw Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-691.C UTT75N75 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 75 V VGSS ±20 V Drain Current Continuous (TC = 25°C) ID Pulsed (Note 2) IDM 75 150 A A Single Pulsed Avalanche Energy (Note 3) Peak Diode Recovery dv/dt (Note 4) EAS dv/dt 140 mJ 1.1 V/ns TO-220 180 W Power Dissipation TO-220F PD 45 W TO-252 64 W Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55~+150 °C Not...