Document
UNISONIC TECHNOLOGIES CO., LTD UTT100P03
-100A, -30V P-CHANNEL POWER MOSFET
DESCRIPTION
The UTC UTT100P03 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche.
The UTC UTT100P03 is suitable for low voltage and high speed switching applications
FEATURES
* RDS(ON) ≤ 4.3mΩ @ VGS=-10V, ID=-80A RDS(ON) ≤ 7.6mΩ @ VGS=-4.5V, ID=-50A
* High Switching Speed
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT100P03L-TA3-T
UTT100P03G-TA3-T
UTT100P03L-TQ2-T
UTT100P03G-TQ2-T
UTT100P03L-TQ2-R
UTT100P03G-TQ2-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220 TO-263 TO-263
Pin Assignment 123 GDS GDS GDS
Packing
Tube Tube Tape Reel
MARKING
www.unisonic.com.tw Copyright © 2019 Unisonic Technologies Co., Ltd
1 of 7
QW-R502-697.C
UTT100P03
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
Continuous
Drain Current
(Note 2)
TC=25°C, VGS=-10V
VGSS ID
-16 -100
V A
Power Dissipation
Pulsed (Note 3) TC=25°C TC=25°C
IDM PD
-200 120
A W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Current is limited by bondwire; with a θJC = 0.65 °C/W the chip is able to carry ID=-195A at 25°C. 3. Defined by design. Not subject to production test.
THERMAL DATA
PARAMETER
SYMBOL
Junction to Ambient Junction to Case
θJA θJC
Note: Defined by design. Not subject to production test.
RATINGS 62.5 1.04
UNIT °C/W °C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Reverse
BVDSS IDSS
IGSS
ID=-250µA, VGS=0V VDS=-30V, VGS=0V, TJ=25°C VGS=+16V, VDS=0V VGS=-16V, VDS=0V
-30 V -0.1 -1 µA +10 +100 nA -10 -100 nA
ON CHARACTERISTICS Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS (Note 1) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS (Note 1) Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall-Time
VGS(TH) RDS(ON)
VDS=VGS, ID=-250µA VGS=-4.5V, ID=-50A VGS=-10, ID=-80A
CISS COSS CRSS
VGS=0V, VDS=-25V, f=1.0MHz
QG QGS QGD tD(ON) tR tD(OFF)
tF
VDD=-15V, VGS=-10V, ID=-100A VDD=-15V, VGS=-10V, ID=-100A
-1.0 -1.5 -2.1 V 5.6 7.6 mΩ 3.9 4.3 mΩ
9500 1320 920
pF pF pF
180 nC 28 nC 35 nC 16 ns 20 ns 175 ns 126 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTIC.