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UTT100P03 Dataheets PDF



Part Number UTT100P03
Manufacturers Unisonic Technologies
Logo Unisonic Technologies
Description P-CHANNEL POWER MOSFET
Datasheet UTT100P03 DatasheetUTT100P03 Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD UTT100P03 -100A, -30V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT100P03 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. The UTC UTT100P03 is suitable for low voltage and high speed switching applications  FEATURES * RDS(ON) ≤ 4.3mΩ @ VGS=-10V, ID=-80A RDS(ON) ≤ 7.6mΩ @ VGS=-4.5V, ID=-50A * High Switching Speed .

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UNISONIC TECHNOLOGIES CO., LTD UTT100P03 -100A, -30V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT100P03 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche. The UTC UTT100P03 is suitable for low voltage and high speed switching applications  FEATURES * RDS(ON) ≤ 4.3mΩ @ VGS=-10V, ID=-80A RDS(ON) ≤ 7.6mΩ @ VGS=-4.5V, ID=-50A * High Switching Speed  SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT100P03L-TA3-T UTT100P03G-TA3-T UTT100P03L-TQ2-T UTT100P03G-TQ2-T UTT100P03L-TQ2-R UTT100P03G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-263 TO-263 Pin Assignment 123 GDS GDS GDS Packing Tube Tube Tape Reel  MARKING www.unisonic.com.tw Copyright © 2019 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-697.C UTT100P03 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -30 V Gate-Source Voltage Continuous Drain Current (Note 2) TC=25°C, VGS=-10V VGSS ID -16 -100 V A Power Dissipation Pulsed (Note 3) TC=25°C TC=25°C IDM PD -200 120 A W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Current is limited by bondwire; with a θJC = 0.65 °C/W the chip is able to carry ID=-195A at 25°C. 3. Defined by design. Not subject to production test.  THERMAL DATA PARAMETER SYMBOL Junction to Ambient Junction to Case θJA θJC Note: Defined by design. Not subject to production test. RATINGS 62.5 1.04 UNIT °C/W °C/W  ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse BVDSS IDSS IGSS ID=-250µA, VGS=0V VDS=-30V, VGS=0V, TJ=25°C VGS=+16V, VDS=0V VGS=-16V, VDS=0V -30 V -0.1 -1 µA +10 +100 nA -10 -100 nA ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC PARAMETERS (Note 1) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS (Note 1) Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall-Time VGS(TH) RDS(ON) VDS=VGS, ID=-250µA VGS=-4.5V, ID=-50A VGS=-10, ID=-80A CISS COSS CRSS VGS=0V, VDS=-25V, f=1.0MHz QG QGS QGD tD(ON) tR tD(OFF) tF VDD=-15V, VGS=-10V, ID=-100A VDD=-15V, VGS=-10V, ID=-100A -1.0 -1.5 -2.1 V 5.6 7.6 mΩ 3.9 4.3 mΩ 9500 1320 920 pF pF pF 180 nC 28 nC 35 nC 16 ns 20 ns 175 ns 126 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTIC.


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