2N6042

PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 Plastic Medium-Power Complementary Silicon Transistors Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching applications. Features High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc Collector−Emitter Sustaining Voltage − @ 100 mAdc − VCEO(sus) = 60 Vdc (Min) − 2N6040, 2N6043 = 100 Vdc (Min) − 2N6042, 2N6045 Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc − 2N6043,44 = 2.0 Vdc (Max) @ IC = 3.0 Adc − 2N6042, 2N6045 Monolithic Construction with Built−In Base−Emitter Shunt Resistors Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector−Emitter Voltage 2N6040 VCEO 60 Vdc 2N6043 2N6042 2N6045 100 Collector−Base Voltage 2N6040 2N6043 2N6042 2N6045 VCB 60 Vdc 100 Emitter−Base Voltage Collector Current Continuous Peak VEB IC 5.0 Vdc 8.0 Adc 16 Base Current Total Power Dissipation @ TC = 25°C Derate above 25°C IB 120 mAdc PD 75 W 0.60 W/°C Operating and Storage Junction Temperature Range TJ, Tstg –65 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Indicates JEDEC Register...