UTT18P10

UNISONIC TECHNOLOGIES CO., LTD UTT18P10 -100V, -18A P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT18P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can also withstand high energy in the avalanche.  FEATURES * RDS(ON) ≤ 180 mΩ @ VGS=-10V, ID=-9.0A RDS(ON) ≤ 210 mΩ @ VGS=-4.5V, ID=-9.0A * High Switching Speed  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UTT18P10L-TA3-T UTT18P10G-TA3-T TO-220 UTT18P10L-TN3-R UTT18P10G-TN3-R TO-252 UTT18P10L-P5060-R UTT18P10G-P5060-R PDFN5×6 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 12345678 Packing G D S - - - - - Tube G D S - - - - - Tape Reel S S S G D D D D Tape Reel www.unisonic.com.tw Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 9 QW-R502-619.I UTT18P10  MARKING TO-220 / TO-252 Power MOSFET PDFN5×6 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 9 QW-R502-619.I UTT18P10 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -100 V Gate-Source Voltage VGSS ±20 V Drain Current Continuous, VGSS @ -10V TC=25°C ID -18 A Pulsed (Note 3) IDM -24 A Avalanche Energy Single Pulsed (Note 4) EAS 39.2 mJ Power Dissipation (TC=25°C) TO-220 TO-252 PDFN5×6 100 W PD 48 W 13 W Junction Temperature TJ +150...