P-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD
UTT30P04
Preliminary
-21A, -40V P-CHANNEL POWER MOSFET
DESCRIPTION
The UTC UTT30P04...
Description
UNISONIC TECHNOLOGIES CO., LTD
UTT30P04
Preliminary
-21A, -40V P-CHANNEL POWER MOSFET
DESCRIPTION
The UTC UTT30P04 is a P-channel power MOSFET providing customers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness by UTC’s advanced technology.
FEATURES
* Low on-Resistance * Fast Switching Speed
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT30P04L-TN3-R
UTT30P04G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package TO-252
Pin Assignment 123 GDS
Packing Tape Reel
MARKING
www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-613.b
UTT30P04
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATING (TC =25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage Gate-Source Voltage
VDSS VGSS
-40 ±20
V V
Drain Current
Continuous Pulsed (Note 2)
ID IDM
-21 -70
A A
Avalanche Current (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
IAS EAS
-27 A 36 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4 V/nS
Power Dissipation
PD 30 W
Junction Temperature Storage Temperature Range
TJ TSTG
+150 -55 ~ +150
°C °C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperatur...
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