UTT50P10

UNISONIC TECHNOLOGIES CO., LTD UTT50P10 -50A, -100V P-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC UTT50P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high energy in the avalanche.  FEATURES * VDS= -100V * ID = -50A * RDS(ON) ≤ 60 mΩ @ VGS= -10V, ID= -20A RDS(ON) ≤ 75 mΩ @ VGS= -4.5V, ID= -15A * High Switching Speed  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT50P10L-TA3-T UTT50P10G-TA3-T UTT50P10L-TF1-T UTT50P10G-TF1-T UTT50P10L-TF2-T UTT50P10G-TF2-T UTT50P10L-TF3-T UTT50P10G-TF3-T UTT50P10L-TM3-T UTT50P10G-TM3-T UTT50P10L-TN3-R UTT50P10G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F2 TO-220F TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tape Reel  MARKING www.unisonic.com.tw Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-607.E UTT50P10 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS -100 V VGSS ±20 V Drain Current Continuous Pulsed ID -50 A IDM -90 A Avalanche energy Single Pulsed (Note 3) EAS 90 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 2.1 V/ns TO-220 110 W Power Dissipation TO-220F/TO-220F1 TO-220F2 PD 34 W TO-2...