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UTT60P03

Unisonic Technologies

P-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD UTT60P03 Preliminary -60A, -30V, P-CHANNEL POWER MOSFETS  DESCRIPTION The UTC UTT60P...


Unisonic Technologies

UTT60P03

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Description
UNISONIC TECHNOLOGIES CO., LTD UTT60P03 Preliminary -60A, -30V, P-CHANNEL POWER MOSFETS  DESCRIPTION The UTC UTT60P03 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance and it can also withstand high energy in the avalanche. This UTC UTT60P03 is suitable for switching converters, motor drivers, switching regulators and relay drivers.  FEATURES * RDS(ON) < 0.027Ω @ VGS=-10V, ID=-60A * High Switching Speed  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT60P03L-TN3-R UTT60P03G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-252 Pin Assignment 123 GD S Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-605.b UTT60P03 Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (Note 2) VDSS -30 V Gate-Source Voltage Drain Current Power Dissipation Continuous Pulsed (Note 2) VGSS ID IDM PD ±20 -60 240 45 V A A W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperat...




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