DatasheetsPDF.com

UTT75P03

Unisonic Technologies

P-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD UTT75P03 Preliminary -75A, -30V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT75P03...


Unisonic Technologies

UTT75P03

File Download Download UTT75P03 Datasheet


Description
UNISONIC TECHNOLOGIES CO., LTD UTT75P03 Preliminary -75A, -30V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT75P03 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, high current capacity and a minimum on-state resistance.  FEATURES * RDS(ON) < 7.0mΩ @ VGS=-10V, ID=-30A * High Switching Speed * High Current Capacity  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT75P03L-TA3-T UTT75P03G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 Pin Assignment 123 GDS Packing Tube  MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-648.b UTT75P03 Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -30 V Gate-Source Voltage Drain Current Continuous Pulsed TC=25°C TC=125°C VGSS ID IDM ±20 -75 (Note 2) -65 -240 V A A A Avalanche Current Repetitive Avalanche Energy (Note 3) L=0.1mH IAR EAR -60 A 180 mJ Power Dissipation Junction Temperature TC=25°C PD TJ 187 -55 ~ +175 W °C Storage Temperature TSTG -55 ~ +175 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Package limited. 3. Duty cycle≤1%.  THERMAL DATA PARAMETER Junction to...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)