CMXT3946

CMXT3946 SURFACE MOUNT SUPERmini™ DUAL COMPLEMENTARY SILICON TRANSISTOR Central DESCRIPTION: TM Semiconductor Corp. The CENTRAL SEMICONDUCTOR CMXT3946 type is a dual complementary silicon transistor manufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface mount package, designed for small signal general purpose and switching applications. MARKING CODE: X46 SOT-26 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current IC Power Dissipation PD Operating and Storage Junction Temperature TJ,Tstg Thermal Resistance ΘJA NPN 60 40 6.0 200 350 -65 to +150 357 PNP 40 40 5.0 UNITS V V V mA mW °C °C/W ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) PNP NPN SYMBOL TEST CONDITIONS MIN MAX MIN MAX ICEV VCE=30V, VEB=3.0V 50 50 BVCBO IC=10µA 60 40 BVCEO IC=1.0mA 40 40 BVEBO IE=10µA 6.0 5.0 VCE(SAT) IC=10mA, IB=1.0mA 0.20 0.25 VCE(SAT) IC=50mA, IB=5.0mA 0.30 0.40 VBE(SAT) IC=10mA, IB=1.0mA 0.65 0.85 0.65 0.85 VBE(SAT) IC=50mA, IB=5.0mA 0.95 0.95 hFE VCE=1.0V, IC=0.1mA 40 60 hFE VCE=1.0V, IC=1.0mA 70 80 hFE VCE=1.0V, IC=10mA 100 300 100 300 hFE VCE=1.0V, IC=50mA 60 60 hFE VCE=1.0V, IC=100mA 30 30 fT VCE=20V, IC=10mA, f=100MHz 300 250 Cob VCB=5.0V, IE=0, f=1.0MHz 4.0 4.5 Cib VBE=0.5V, IC=0, f=1.0MHz 8.0 10 hie VCE=10V, IC=1.0mA, f=1.0kHz 1.0 10 2.0 12 hre VCE=10V, IC=1.0mA, f=1.0kHz 0.5 8.0 0.1 10 hfe VCE=10V, IC=1.0mA, f=1.0kHz 100 400 100 400 hoe VC...