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2N6052 Dataheets PDF



Part Number 2N6052
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR
Datasheet 2N6052 Datasheet2N6052 Datasheet (PDF)

2N6052 Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain — hFE = 3500 (Typ) @ IC = 5.0 Adc • Collector−Emitter Sustaining Voltage — @ 100 mA VCEO(sus) = 100 Vdc (Min) • Monolithic Construction with Built−In Base−Emitter Shunt Resistors • This is a Pb−Free Device* MAXIMUM RATINGS (Note 1) Rating Collector−Emitter Voltage Collector−Base Voltage Emit.

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2N6052 Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain — hFE = 3500 (Typ) @ IC = 5.0 Adc • Collector−Emitter Sustaining Voltage — @ 100 mA VCEO(sus) = 100 Vdc (Min) • Monolithic Construction with Built−In Base−Emitter Shunt Resistors • This is a Pb−Free Device* MAXIMUM RATINGS (Note 1) Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Peak Base Current Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VCEO VCB VEB IC IB PD TJ, Tstg Value 100 100 5.0 12 20 0.2 150 0.857 −65 to + 200 Unit Vdc Vdc Vdc Adc Adc W W/°C °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.17 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC Registered Data. http://onsemi.com 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTOR 100 VOLTS, 150 WATTS COLLECTOR CASE BASE 1 EMITTER 2 MARKING DIAGRAM 1 2 TO−204AA (TO−3) CASE 1−07 STYLE 1 2N6052G AYYWW MEX PD, POWER DISSIPATION (WATTS) 160 2N6052 = Device Code 140 G = Pb−Free Package A = Location Code 120 YY = Year 100 WW = Work Week MEX = Country of Orgin 80 60 40 20 0 0 25 50 75 100 125 150 175 200 TC, CASE TEMPERATURE (°C) Figure 1. Power Derating ORDERING INFORMATION Device 2N6052G Package TO−3 (Pb−Free) Shipping 100 Units/Tray Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2008 1 September, 2008 − Rev. 5 Publication Order Number: 2N6052/D 2N6052 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Min Max Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ OFF CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Sustaining Voltage (Note 3) (IC = 100 mAdc, IB = 0) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current (VCE = 50 Vdc, IB = 0) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current (VCE = Rated VCEO, VBE(off) = 1.5 Vdc) (VCE = Rated VCEO, VBE(off) = 1.5 Vdc, TC = 150_C) VCEO(sus) 100 ICEO − ICEX − − − Vdc 1.0 mAdc mAdc 0.5 5.0 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter Cutoff Current ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ON CHARACTERISTICS (Note 3) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC Current Gain (VBE = 5.0 Vdc, IC = 0) (IC = 6.0 Adc, VCE = 3.0 Vdc) (IC = 12 Adc, VCE = 3.0 Vdc) IEBO hFE − 2.0 mAdc − 750 18,000 100 − ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Saturation Voltage VCE(sat) (IC = 6.0 Adc, IB = 24 mAdc) − (IC = 12 Adc, IB = 120 mAdc) − Vdc 2.0 3.0 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base−Emitter Saturation Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base−Emitter On Voltage (IC = 12 Adc, IB = 120 mAdc) VBE(sat) − (IC = 6.0 Adc, VCE = 3.0 Vdc) VBE(on) − 4.0 Vdc 2.8 Vdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DYNAMIC CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Magnitude of Common Emitter Small−Signal Short Circuit Forward Current Transfer Ratio (IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Small−Signal Current Gain (IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) |hfe| 4.0 − MHz Cob − 500 pF hfe 300 − − 2. Indicates JEDEC Registered Data. 3. Pulse test: Pulse Width = 300 ms, D.


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