Document
2N6052
Preferred Device
Darlington Complementary Silicon Power Transistors
This package is designed for general−purpose amplifier and low frequency switching applications.
Features
• High DC Current Gain — hFE = 3500 (Typ) @ IC = 5.0 Adc • Collector−Emitter Sustaining Voltage — @ 100 mA
VCEO(sus) = 100 Vdc (Min)
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors • This is a Pb−Free Device*
MAXIMUM RATINGS (Note 1)
Rating
Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous
Peak
Base Current Total Power Dissipation @ TC = 25°C Derate above 25°C
Operating and Storage Temperature Range
Symbol VCEO VCB VEB
IC
IB PD
TJ, Tstg
Value
100 100 5.0 12 20
0.2 150 0.857
−65 to + 200
Unit Vdc Vdc Vdc Adc
Adc W W/°C °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case RqJC
1.17
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC Registered Data.
http://onsemi.com
12 AMPERE COMPLEMENTARY SILICON
POWER TRANSISTOR 100 VOLTS, 150 WATTS
COLLECTOR CASE BASE 1
EMITTER 2
MARKING DIAGRAM
1 2
TO−204AA (TO−3) CASE 1−07 STYLE 1
2N6052G AYYWW
MEX
PD, POWER DISSIPATION (WATTS)
160
2N6052 = Device Code
140
G
= Pb−Free Package
A
= Location Code
120
YY
= Year
100
WW
= Work Week
MEX
= Country of Orgin
80
60
40
20
0 0 25 50 75 100 125 150 175 200 TC, CASE TEMPERATURE (°C) Figure 1. Power Derating
ORDERING INFORMATION
Device 2N6052G
Package
TO−3 (Pb−Free)
Shipping 100 Units/Tray
Preferred devices are recommended choices for future use and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2008
1
September, 2008 − Rev. 5
Publication Order Number: 2N6052/D
2N6052
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
Symbol
Min
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Sustaining Voltage (Note 3)
(IC = 100 mAdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current
(VCE = 50 Vdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current
(VCE = Rated VCEO, VBE(off) = 1.5 Vdc) (VCE = Rated VCEO, VBE(off) = 1.5 Vdc, TC = 150_C)
VCEO(sus)
100
ICEO
−
ICEX − −
−
Vdc
1.0
mAdc
mAdc
0.5 5.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter Cutoff Current ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ON CHARACTERISTICS (Note 3) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC Current Gain
(VBE = 5.0 Vdc, IC = 0) (IC = 6.0 Adc, VCE = 3.0 Vdc) (IC = 12 Adc, VCE = 3.0 Vdc)
IEBO hFE
−
2.0
mAdc
−
750
18,000
100
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Saturation Voltage
VCE(sat)
(IC = 6.0 Adc, IB = 24 mAdc)
−
(IC = 12 Adc, IB = 120 mAdc)
−
Vdc
2.0 3.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base−Emitter Saturation Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base−Emitter On Voltage
(IC = 12 Adc, IB = 120 mAdc)
VBE(sat)
−
(IC = 6.0 Adc, VCE = 3.0 Vdc)
VBE(on)
−
4.0
Vdc
2.8
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Magnitude of Common Emitter Small−Signal Short Circuit Forward
Current Transfer Ratio
(IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Small−Signal Current Gain
(IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
|hfe|
4.0
−
MHz
Cob
−
500
pF
hfe
300
−
−
2. Indicates JEDEC Registered Data.
3. Pulse test: Pulse Width = 300 ms, D.