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81RIA40 Dataheets PDF



Part Number 81RIA40
Manufacturers International Rectifier
Logo International Rectifier
Description PHASE CONTROL THYRISTORS
Datasheet 81RIA40 Datasheet81RIA40 Datasheet (PDF)

Bulletin I25201 rev. B 03/03 80RIA SERIES PHASE CONTROL THYRISTORS Stud Version Features Hermetic glass-metal seal International standard case TO-209AC (TO-94) 80A Typical Applications DC motor controls Controlled DC power supplies AC controllers www.DataSheet.net/ Major Ratings and Characteristics Parameters IT(AV) @ TC IT(RMS) ITSM @ 50Hz @ 60Hz I 2t @ 50Hz @ 60Hz V DRM /V RRM tq TJ typical 80RIA 80 85 125 1900 1990 18 16 400 to 1200 110 - 40 to 125 Unit A °C A A A KA2s KA2s V µs °C ca.

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Bulletin I25201 rev. B 03/03 80RIA SERIES PHASE CONTROL THYRISTORS Stud Version Features Hermetic glass-metal seal International standard case TO-209AC (TO-94) 80A Typical Applications DC motor controls Controlled DC power supplies AC controllers www.DataSheet.net/ Major Ratings and Characteristics Parameters IT(AV) @ TC IT(RMS) ITSM @ 50Hz @ 60Hz I 2t @ 50Hz @ 60Hz V DRM /V RRM tq TJ typical 80RIA 80 85 125 1900 1990 18 16 400 to 1200 110 - 40 to 125 Unit A °C A A A KA2s KA2s V µs °C case style TO-209AC (TO-94) www.irf.com 1 Datasheet pdf - http://www.DataSheet4U.co.kr/ 80RIA Series Bulletin I25201 rev. B 03/03 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage Type number Code 40 80RIA 80 120 V DRM/V RRM, max. repetitive peak and off-state voltage V 400 800 1200 VRSM , maximum nonrepetitive peak voltage V 500 900 1300 I DRM/I RRM max. @ TJ = 125°C mA 15 On-state Conduction Parameter I T(AV) Max. average on-state current @ Case temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one-cycle non-repetitive surge current 80RIA 80 85 125 1900 1990 1600 1675 Units A °C A Conditions 180° conduction, half sine wave DC @ 75°C case temperature t = 10ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max. www.DataSheet.net/ A t = 8.3ms t = 10ms t = 8.3ms t = 10ms I2t Maximum I2t for fusing 18 16 12.7 11.7 KA2 s t = 8.3ms t = 10ms t = 8.3ms I 2√ t Maximum I2√t for fusing 180.5 0.99 KA2√s t = 0.1 to 10ms, no voltage reapplied (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. V T(TO)1 Low level value of threshold voltage V T(TO) 2 High level value of threshold voltage r t1 r t2 V TM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Max. on-state voltage Maximum holding current Typical latching current V 1.13 (I > π x IT(AV)),TJ = TJ max. (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. mΩ 1.84 1.60 200 400 mA T J = 25°C, anode supply 12V resistive load V (I > π x IT(AV)),TJ = TJ max. Ipk= 250A, TJ = 25°C tp = 10ms sine pulse 2.29 2 www.irf.com Datasheet pdf - http://www.DataSheet4U.co.kr/ 80RIA Series Bulletin I25201 rev. B 03/03 Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current 300 A/µs 80RIA Units Conditions TJ = 125°C, Vd = rated VDRM, ITM = 2xdi/dt snubber Per JEDEC Standard RS-397, 5.2.2.6. 0.2µF, 15Ω, Gate pulse: 20V, 65Ω, tp = 6µs, tr= 0.5µs td tq Typical delay time 1 µs Gate pulse: 10V, 15Ω source, tp = 6µs, tr = 0.1µs, Vd = rated VDRM, ITM = 50Adc, TJ = 25°C. dv/dt = 20V/µs, Gate bias: 0V 25Ω, tp = 500µs ITM = 50A, TJ = TJ max, di/dt = -5A/µs min., VR = 50V, Typical turn-off time 110 Blocking Parameter dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current 80RIA 500 15 Units V/µs mA Conditions TJ = 125°C exponential to 67% rated VDRM TJ = 125°C rated V DRM /V RRM applied www.DataSheet.net/ Triggering Parameter PGM Maximum peak gate power 80RIA 12 3 3 20 Units W A Conditions TJ = TJ max, t p ≤ 5ms TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, t p ≤ 5ms PG(AV) Maximum average gate power IGM +VGM -VGM Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage IGT Max. DC gate current required to trigger V 10 270 120 60 mA TJ = TJ max, tp ≤ 5ms TJ = - 40°C TJ = 25°C TJ = 125°C TJ = - 40°C V TJ = 25°C TJ = 125°C mA TJ = TJ max Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 6V anode-to-cathode applied VGT Max. DC gate voltage required to trigger 3.5 2.5 1.5 IGD VGD DC gate current not to trigger 6 DC gate voltage not to trigger 0.25 V www.irf.com 3 Datasheet pdf - http://www.DataSheet4U.co.kr/ 80RIA Series Bulletin I25201 rev. B 03/03 Thermal and Mechanical Specification Parameter TJ Tstg Max. operating temperature range Max. storage temperature range 80RIA -40 to 125 -40 to 150 0.30 Units °C Conditions RthJC Max. thermal resistance, junction to case RthCS Max. thermal resistance, case to heatsink T Mounting torque, ± 10% DC operation K/W 0.1 15.5 (137) 14 (120) Nm (lbf-in) g Mounting surface, smooth, flat and greased Non lubricated threads Lubricated threads wt Approximate weight Case style 130 TO-209AC(TO-94) See Outline Table ∆RthJ-C Conduction (The following table shows the increment of thermal resistence RthJ-C when devices operate at different conduction angles than DC) Conduction angle 180° 120° 90° 60° 30° Sinusoidal conduction Rectangular conduction Units 0.042 0.050 0.064 0.095 0.164 0.030 0.052 0.070 0.100 www.DataSheet.net/ Conditions K/W T J = T J max. 0.165 Ordering Information Table Device Code 8 1 0 2 RIA 120 3 4 1 2 - ITAV x 10A 0 = Eyelet terminals (Gate and.


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