2N6075B

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6071/D Sensitive Gate Triacs Silicon Bidirectional Thyristors . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. Sensitive Gate Triggering Uniquely Compatible for Direct Coupling to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit Logic Functions Gate Triggering 4 Mode — 2N6071A,B, 2N6073A,B, 2N6075A,B Blocking Voltages to 600 Volts All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability Small, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability 2N6071A,B* 2N6073A,B* 2N6075A,B* *Motorola preferred devices TRIACs 4 AMPERES RMS 200 thru 600 VOLTS MT1 MT2 G MT2 G MT2 MT1 CASE 77-08 (TO-225AA) STYLE 5 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating *Peak Repetitive Off-State Voltage(1) (Gate Open, TJ = 25 to 110°C) 2N6071A,B 2N6073A,B 2N6075A,B IT(RMS) ITSM I2t PGM PG(AV) VGM Symbol VDRM 200 400 600 4 30 3.7 10 0.5 5 Amps Amps A2s Watts Watt Volts Value Unit Volts *On-State Current RMS (TC = 85°C) *Peak Surge Current (One Full cycle, 60 Hz, TJ = –40 to +110°C) Circuit Fusing Conside...