2N6111

2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features High DC Current Gain High Current Gain − Bandwidth Product TO−220 Compact Package These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector−Emitter Voltage 2N6111, 2N6288 2N6109 2N6107, 2N6292 VCEO 30 50 70 Vdc Collector−Base Voltage 2N6111, 2N6288 2N6109 2N6107, 2N6292 VCB Vdc 40 60 80 Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C VEB 5.0 Vdc IC 7.0 Adc ICM 10 Adc IB 3.0 Adc PD 40 W 0.32 W/°C Operating and Storage Junction Temperature Range TJ, Tstg −65 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Indicates JEDEC Registered Data. THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction−to−Case Symbol RqJC Max 3.125 Unit _C/W www.onsemi.com 7 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 30 − 50 − 70 VOLTS, 40 WATTS PNP COLLECTOR 2, 4 NPN COLLECTOR 2, 4 1 BASE EMITTER 3 4 1 BASE EMITTER 3 TO−220 CASE 221A STYLE 1 1 2 3 MARKING DIAGRAM 2N6xxxG AYWW *For additional information on our Pb−Free strategy and s...