2N1711

NPN 2N1613 – 2N1711 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N1613 and 2N1711 are NPN transistors mounted in TO-39 metal package with the collector connected to the case . They are designed for use in high-performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCER VEBO IC ICM IBM PD TJ TStg Ratings Collector-Base Voltage Collector-Emitter Voltage (RBE = 10Ω) Emitter-Base Voltage Collector Current Peak Collector Current Peak Base Current Total Power Dissipation Junction Temperature Storage Temperature range Value 75 50 7 5 1 200 3 1.7 0.8 200 -65 to +150 Unit V V V mA A mA W W W °C °C www.DataSheet.net/ @ Tcase= 25° @ Tcase= 100° @ Tamb= 25° THERMAL CHARACTERISTICS Symbol RthJ-c RthJ-amb Ratings Thermal Resistance, Junction-case Thermal Resistance, Junction-ambient Value 58 219 Unit °C/ W °C/ W COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN 2N1613 – 2N1711 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO IEB0 VCBO Ratings Collector Cutoff Current Emitter Cutoff Current Test Condition(s) VCE=60 V, IE=0 VCE=60 V, IE=0 Tamb = 150°C VEB=5 V VEB=5 V IC=0.1 mA IE=100 µA , IC=0 IC=150 mA , IB=15 mA IC=150 mA, IB=15 mA IC=0.1 mA, VCE=10 V IC=10 mA, VCE=10 V IC=150 mA, VCE=10 V IC=500 mA, VCE=10 V IC=10 µA, VCE=10 V IC=0.1 mA, VCE=10 V IC=10 mA, VCE=10 V IC=150 mA, VCE=...