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2N1893

Comset Semiconductor

Medium Power Transistor

NPN 2N1893 MEDIUM POWER TRANSISTOR The 2N1893 are NPN transistors mounted in TO-39 metal package. They are intended for ...


Comset Semiconductor

2N1893

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Description
NPN 2N1893 MEDIUM POWER TRANSISTOR The 2N1893 are NPN transistors mounted in TO-39 metal package. They are intended for use in high performance amplifier, oscillator and switching applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VCER VEBO IC ICM IBM PD TJ TStg Tamb Ratings Collector-Emitter Voltage (IB = 0) Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (RBE = 10 Ω) Emitter-Base Voltage Collector Current Peak Collector Current Peak Base Current Total Power Dissipation Junction Temperature Storage Temperature range operating ambient temperature Value 80 120 100 7 0.5 1 0.2 0.8 Tamb= 25°C Tcase= 25°C 3 Tcase= 100°C 1.7 200 -65 to +150 -65 to +150 Unit V V V V A A A W www.DataSheet.net/ °C THERMAL CHARACTERISTICS Symbol RthJ-c Rthj-a Ratings Thermal Resistance, Junction-case thermal resistance from junction to ambient in free air Value 58.3 219 Unit °C/ W COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN 2N1893 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO IEBO VCBO VCEO VCER VEBO Ratings Collector Cutoff Current Emitter Cutoff Current Collector Base Sustaining Voltage Collector Emitter Sustaining Voltage (*) Collector Base Breakdown Voltage (*) Emitter Base Breakdown Voltage DC Current Gain (*) Collector-Emitter saturation Voltage (*) Base-Emitter saturation Voltage (*) Transition Frequency Collector Capacitance Base Capacitance Test Condition(s) VCB= 90 V IE= 0 VEB= 5 V, IB=...




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