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2N2218 Dataheets PDF



Part Number 2N2218
Manufacturers Comset Semiconductor
Logo Comset Semiconductor
Description Switching Silicon Transistors
Datasheet 2N2218 Datasheet2N2218 Datasheet (PDF)

NPN 2N2218 – 2N2218A 2N2219 – 2N2219A SWITCHING SILICON TRANSISTORS The 2N2218-A and 2N2219-A are NPN transistors mounted in TO-39 metal case . They are designed for high-speed switching applications and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Value Symbol Ratings www.DataSheet.net/ 2N2218 2N2219 30 60 5 800 2N2218 A 2N2219 A 40 75 6 Unit VCEO VCBO VEBO IC PD Collector.

  2N2218   2N2218



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NPN 2N2218 – 2N2218A 2N2219 – 2N2219A SWITCHING SILICON TRANSISTORS The 2N2218-A and 2N2219-A are NPN transistors mounted in TO-39 metal case . They are designed for high-speed switching applications and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Value Symbol Ratings www.DataSheet.net/ 2N2218 2N2219 30 60 5 800 2N2218 A 2N2219 A 40 75 6 Unit VCEO VCBO VEBO IC PD Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Tamb = 25° Total Power Dissipation Tcase= 25° V V V mA W 0.8 3 175 -65 to +200 °C °C TJ TStg Junction Temperature Storage Temperature range THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-c Ratings Thermal Resistance, Junction to ambient in free air Thermal Resistance, Junction to case Value 50 187.5 Unit °C/W °C/W 1|4 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN 2N2218 – 2N2218A 2N2219 – 2N2219A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO Ratings Collector Cutoff Current Emitter Cutoff Current Collector Cutoff Current Collector Emitter Breakdown Voltage (*) Collector Base Breakdown Voltage Emitter Base Breakdown Voltage VCB= 50 V IE= 0 VCB= 60 V IE= 0 Test Condition(s) Tj= 25°C Tj= 150°C Tj= 25°C Tj= 150°C 2N2218-2N2219 2N2218-2N2219 2N2218A-2N2219A 2N2218A-2N2219A 2N2218-2N2219 2N2218A-2N2219A 2N2218A-2N2219A 2N2218-2N2219 2N2218A-2N2219A www.DataSheet.net/ Min Typ Max 30 40 60 75 5 6 20 35 25 50 35 75 15 35 20 50 40 100 20 25 30 40 10 10 10 10 10 10 120 300 - Unit nA µA nA µA nA nA V IEBO ICEX VCEO VBE= 3.0 V, IC=0 VCE= 60 V, -VBE= 3V IC= 10 mA, IB= 0 2N2218-2N2219 2N2218A-2N2219A 2N2218-2N2219 VCBO IC= 10 µA, IE= 0 V VEBO IE= 10 µA, IC= 0 hFE DC Current Gain (*) 2N2218A-2N2219A 2N2218-2N2218A IC=0.1 mA, VCE=10 V 2N2219-2N2219A 2N2218-2N2218A IC=1 mA, VCE=10 V 2N2219-2N2219A 2N2218-2N2218A IC=10 mA, VCE=10 V 2N2219-2N2219A IC=10 mA, VCE=10 V 2N2218A Tamb = -55°C 2N2219A 2N2218-2N2218A IC=150 mA, VCE=1 V 2N2219-2N2219A 2N2218-2N2218A IC=150 mA, VCE=10 V 2N2219-2N2219A 2N2218 2N2218A IC=500 mA, VCE=10 V 2N2219 2N2219A V - 16/10/2012 COMSET SEMICONDUCTORS 2|4 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN 2N2218 – 2N2218A 2N2219 – 2N2219A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCE(SAT) Ratings Test Condition(s) Min Typ Mx Unit 0.6 250 300 30 50 50 75 0.4 0.3 1.6 1 1.3 1.2 2.6 2 150 300 300 375 10 25 225 60 150 V VCE(SAT) fT hfe td tr ts tf rb,CC 2N2218-2N2219 2N2218A-2N2219A 2N2218-2N2219 2N2218A-2N2219A 2N2218-2N2219 IC=150 mA, IB=15 mA Collector-Emitter 2N2218A-2N2219A saturation Voltage 2N2218-2N2219 (*) IC=500 mA, IB=50 mA 2N2218A-2N2219A 2N2218-2N2218A Transition IC=20 mA, VCE=20 V 2N2219 f= 100MHz frequency 2N2219A 2N2218A IC=1 mA, VCE=10 V f= 1kHz 2N2219A Small signal current gain 2N2218A IC=10 mA, VCE=10 V f= 1kHz 2N2219A IC=150 mA, IB =15 mA 2N2218A Delay time -VBB=0.5 .


2N2102 2N2218 2N2218A


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