Document
NPN 2N2218 – 2N2218A 2N2219 – 2N2219A
SWITCHING SILICON TRANSISTORS
The 2N2218-A and 2N2219-A are NPN transistors mounted in TO-39 metal case . They are designed for high-speed switching applications and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS Value Symbol Ratings
www.DataSheet.net/
2N2218 2N2219
30 60 5 800
2N2218 A 2N2219 A
40 75 6
Unit
VCEO VCBO VEBO IC PD
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Tamb = 25° Total Power Dissipation Tcase= 25°
V V V mA W
0.8 3 175 -65 to +200 °C °C
TJ TStg
Junction Temperature Storage Temperature range
THERMAL CHARACTERISTICS Symbol
RthJ-a RthJ-c
Ratings
Thermal Resistance, Junction to ambient in free air Thermal Resistance, Junction to case
Value
50 187.5
Unit
°C/W °C/W
1|4
Datasheet
pdf
-
http://www.DataSheet4U.co.kr/
NPN 2N2218 – 2N2218A 2N2219 – 2N2219A
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
ICBO
Ratings
Collector Cutoff Current Emitter Cutoff Current Collector Cutoff Current Collector Emitter Breakdown Voltage (*) Collector Base Breakdown Voltage Emitter Base Breakdown Voltage VCB= 50 V IE= 0 VCB= 60 V IE= 0
Test Condition(s)
Tj= 25°C Tj= 150°C Tj= 25°C Tj= 150°C 2N2218-2N2219 2N2218-2N2219 2N2218A-2N2219A 2N2218A-2N2219A 2N2218-2N2219 2N2218A-2N2219A 2N2218A-2N2219A 2N2218-2N2219 2N2218A-2N2219A
www.DataSheet.net/
Min Typ Max
30 40 60 75 5 6 20 35 25 50 35 75 15 35 20 50 40 100 20 25 30 40 10 10 10 10 10 10 120 300 -
Unit
nA µA nA µA nA nA V
IEBO ICEX VCEO
VBE= 3.0 V, IC=0 VCE= 60 V, -VBE= 3V IC= 10 mA, IB= 0
2N2218-2N2219 2N2218A-2N2219A 2N2218-2N2219
VCBO
IC= 10 µA, IE= 0
V
VEBO
IE= 10 µA, IC= 0
hFE
DC Current Gain (*)
2N2218A-2N2219A 2N2218-2N2218A IC=0.1 mA, VCE=10 V 2N2219-2N2219A 2N2218-2N2218A IC=1 mA, VCE=10 V 2N2219-2N2219A 2N2218-2N2218A IC=10 mA, VCE=10 V 2N2219-2N2219A IC=10 mA, VCE=10 V 2N2218A Tamb = -55°C 2N2219A 2N2218-2N2218A IC=150 mA, VCE=1 V 2N2219-2N2219A 2N2218-2N2218A IC=150 mA, VCE=10 V 2N2219-2N2219A 2N2218 2N2218A IC=500 mA, VCE=10 V 2N2219 2N2219A
V
-
16/10/2012
COMSET SEMICONDUCTORS
2|4
Datasheet pdf - http://www.DataSheet4U.co.kr/
NPN 2N2218 – 2N2218A 2N2219 – 2N2219A
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VCE(SAT)
Ratings
Test Condition(s)
Min Typ Mx Unit
0.6 250 300 30 50 50 75 0.4 0.3 1.6 1 1.3 1.2 2.6 2 150 300 300 375 10 25 225 60 150 V
VCE(SAT)
fT
hfe
td tr ts tf rb,CC
2N2218-2N2219 2N2218A-2N2219A 2N2218-2N2219 2N2218A-2N2219A 2N2218-2N2219 IC=150 mA, IB=15 mA Collector-Emitter 2N2218A-2N2219A saturation Voltage 2N2218-2N2219 (*) IC=500 mA, IB=50 mA 2N2218A-2N2219A 2N2218-2N2218A Transition IC=20 mA, VCE=20 V 2N2219 f= 100MHz frequency 2N2219A 2N2218A IC=1 mA, VCE=10 V f= 1kHz 2N2219A Small signal current gain 2N2218A IC=10 mA, VCE=10 V f= 1kHz 2N2219A IC=150 mA, IB =15 mA 2N2218A Delay time -VBB=0.5 .