2N2906 Transistors Datasheet

2N2906 Datasheet, PDF, Equivalent


Part Number

2N2906

Description

(2N2906/A) General Purpose Amplifier Transistors

Manufacture

Comset Semiconductor

Total Page 3 Pages
Datasheet
Download 2N2906 Datasheet


2N2906
PNP 2N2906 – 2N2906A
GENERAL PURPOSE AMPLIFIERS TRANSISTORS
The 2N2906 and 2N2906A are PNP transistors mounted in TO-18 metal package.
They are intended for high speed switching and general purpose applications.
NPN complements are 2N2221 and 2N2221A .
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCBO
VEBO
IC
ICM
IBM
PD
TJ
TStg
Tamb
Collector-Emitter Voltage (IB=0)
Collector-Base Voltage (IE=0)
Emitter-Base Voltage (IC=0)
Collector Current
www.DataSheet.net/
Peak Collector Current
Peak Base Current
Total Power Dissipation
Junction Temperature
Tamb = 25°
Tcase= 25°
Storage Temperature range
Operating Ambient Temperature
Value
Unit
2N2906 2N2906A
-40 -60 V
-60 V
-5 V
-600
mA
-800
mA
-200
mA
0.4 W
1.2 W
200 °C
-65 to +150
°C
-65 to +150
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-a
Thermal Resistance, Junction to ambient in free air
RthJ-c
Thermal Resistance, Junction to case
Value
438
146
Unit
°C/W
°C/W
Datasheet pdf - http://www.DataSheet4U.co.kr/

2N2906
PNP 2N2906 – 2N2906A
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
ICBO
ICBO
IEBO
VCEO
VCBO
VEBO
hFE
VCE(SAT)
VBE(SAT)
fT
td
tr
Cc
Ce
Ratings
Collector Cutoff
Current
Collector Cutoff
Current
Emitter Cutoff
Current (*)
Collector Emitter
Breakdown Voltage
Collector Base
Breakdown Voltage
Emitter Base
Breakdown Voltage
DC Current Gain
Collector-Emitter
saturation Voltage
(*)
Base-Emitter
saturation Voltage
(*)
Transition
frequency
Delay time
Rise time
Collector
capacitance
Emitter capacitance
Test Condition(s)
VCB= -50 V Ta= 25°C
IE= 0
Ta= 150°C
VEB= -5 V, IC= 0
IC= -10 mA, IB= 0
IC= -10 µA, IE= 0
IE= -10 µA, IC= 0
IC= -0.1 mA, VCE= -10 V
I = -1 mA, V = -10 VC
CE
www.DataSheet.net/
IC= -10 mA, VCE= -10 V
IC= -150 mA, VCE= -10 V
IC= -500 mA, VCE= -10 V
IC= -150 mA, IB= -15 mA
IC= -500 mA, IB= -50 mA
IC= -150 mA, IB= -15 mA
IC= -500 mA, IB= -50 mA
IC=-50 mA, VCE=-20 V
f= 100MHz (*)
IC=-150 mA ,IB =-15 mA
-VCC=-30 V
IE= Ie = 0 ,VCB= -10 V
f = 1 MHz
IC= Ic = 0 ,VEB= -2 V
f = 1 MHz
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
2N2906A
2N2906
Min
-
-
-
-
-
-60
-40
-60
-5
40
20
40
25
40
35
40
40
20
-
-
-
-
200
-
-
-
-
Typ Max Unit
-
-
-10
-20
nA
-
-
-10
-20
µA
- -50 nA
-
-
-
-
V
- -V
- -V
--
--
--
--
-
-
-
-
-
- 120
--
--
- -0.4
- -1.6
V
- -1.3
- -2.6
- - MHz
-
-
10
40
ns
- 8 pF
- 30 pF
(*) Pulse conditions : tp < 300 µs, δ =2%
01/10/2012
COMSET SEMICONDUCTORS
2|3
Datasheet pdf - http://www.DataSheet4U.co.kr/


Features PNP 2N2906 – 2N2906A GENERAL PURPOSE A MPLIFIERS TRANSISTORS The 2N2906 and 2N 2906A are PNP transistors mounted in TO -18 metal package. They are intended fo r high speed switching and general purp ose applications. NPN complements are 2 N2221 and 2N2221A . Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol VCEO V CBO VEBO IC ICM IBM Ratings Collector- Emitter Voltage (IB=0) Collector-Base V oltage (IE=0) Emitter-Base Voltage (IC= 0) www.DataSheet.net/ Value 2N2906 -40 -60 -5 -600 -800 -200 Tamb = 25° 0.4 1.2 200 -65 to +150 -65 to +150 Unit - 60 V V V mA mA mA W W °C °C °C 2N29 06A Collector Current Peak Collector C urrent Peak Base Current PD Total Pow er Dissipation Tcase= 25° TJ TStg Tam b Junction Temperature Storage Tempera ture range Operating Ambient Temperatur e THERMAL CHARACTERISTICS Symbol RthJ- a RthJ-c Ratings Thermal Resistance, J unction to ambient in free air Thermal Resistance, Junction to case Value 438 146 Unit °C/W °C/W Datasheet pdf - http://www.DataSheet4U.co.kr/ P.
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