Amplifier Transistors. 2N2907 Datasheet

2N2907 Transistors. Datasheet pdf. Equivalent

Part 2N2907
Description General Purpose Amplifier Transistors
Feature PNP 2N2907 – 2N2907A GENERAL PURPOSE AMPLIFIERS TRANSISTORS The 2N2907 and 2N2907A are PNP transisto.
Manufacture Comset Semiconductor
Datasheet
Download 2N2907 Datasheet



2N2907
PNP 2N2907 – 2N2907A
GENERAL PURPOSE AMPLIFIERS TRANSISTORS
The 2N2907 and 2N2907A are PNP transistors mounted in TO-18 metal package with the
collector connected to the case .
They are primarily intended for high speed switching.
NPN complements are 2N2222 and 2N2222A .
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCBO
VEBO
IC
PD
PD
TJ
TStg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
www.DataSheet.net/
Collector Current
Total Power Dissipation
Total Power Dissipation
Junction Temperature
@ Tamb = 25°
@ Tcase= 25°
Storage Temperature range
Value
2N2907A
2N2907
2N2907A
2N2907
2N2907A
2N2907
2N2907A
2N2907
2N2907A
2N2907
2N2907A
2N2907
2N2907A
2N2907
2N2907A
2N2907
-60
-40
-60
-60
-5
-5
-600
0.4
1.8
200
-65 to +200
Unit
V
V
V
mA
Watts
Watts
°C
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-a
RthJ-c
Thermal Resistance, Junction to ambient in
free air
Thermal Resistance, Junction to case
2N2907A
2N2907
2N2907A
2N2907
Value
350
146
Unit
K/W
K/W
COMSET SEMICONDUCTORS
1/3
Datasheet pdf - http://www.DataSheet4U.co.kr/



2N2907
PNP 2N2907 – 2N2907A
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
ICBO
Collector Cutoff Current
VCB=-50 V, IE=0
2N2907A
2N2907
-
-
-
-
-10
-20
nA
ICBO
ICEX
VCEO
VCBO
VEBO
Collector Cutoff Current
VCB=-50 V, IE=0 2N2907A
Tj=150°C
2N2907
-
-
-
-
-10
-20
µA
Collector Cutoff Current
VCE=-30 V
VBE=0.5V
2N2907A
2N2907
-
- -50 nA
Collector Emitter
Breakdown Voltage
IC=-10 mA
IB=0
2N2907A -60
2N2907 -40
-
-
-
-
V
Collector Base Breakdown IC=-10 µA
Voltage
IE=0
2N2907A -60
2N2907 -60
-
-
-
-
V
Emitter Base Breakdown
Voltage
IE=-10 µA
IC=0
2N2907A -5
2N2907 -5
-
-
-
-
V
IC=-0.1 mA
VCE=-10 Vwww.DataSheet.net/
2N2907A
2N2907
75
-
-
IC=-1 mA
VCE=-10 V
2N2907A
2N2907 100
-
-
hFE
VCE(SAT)
VBE(SAT)
DC Current Gain (*)
IC=-10 mA
VCE=-10 V
IC=-150 mA
VCE=-10 V
IC=-500 mA
VCE=-10 V
IC=-150 mA
Collector-Emitter saturation IB=-15 mA
Voltage (*)
IC=-500 mA
IB=-50 mA
IC=-150 mA
Base-Emitter saturation IB=-15 mA
Voltage (*)
IC=-500 mA
IB=-50 mA
2N2907A
2N2907
100
-
-
-
2N2907A
2N2907
100
-
300
2N2907A 50 -
-
2N2907 30 -
-
2N2907A -
- -0.4
2N2907 - - -0.4
2N2907A -
- -1.6
2N2907
2N2907A
-
-
-
-
-1.6
-1.3
V
2N2907 - - -1.3
2N2907A -
- -2.6
2N2907 - - -2.6
16/10/2012
COMSET SEMICONDUCTORS
3/3
Datasheet pdf - http://www.DataSheet4U.co.kr/





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