NPN transistor. 2N3055 Datasheet

2N3055 transistor. Datasheet pdf. Equivalent

Part 2N3055
Description Silicon Planar Epitaxial NPN transistor
Feature 2N3055 NPN SILICON DARLINGTONS The 2N3055 is a silicon Planar Epitaxial NPN transistor in Jedec TO-3.
Manufacture Comset Semiconductor
Datasheet
Download 2N3055 Datasheet



2N3055
2N3055
NPN SILICON DARLINGTONS
The 2N3055 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case.
Designed for general purpose, moderate speed, switching and amplifier applications
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCBO
VCEO
VCER
VEBO
VCB
VEB
IC
IB
PD
TJ
TS
Collector to Base Voltage
#Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
www.DataSheet.net/
Collector-Base Voltage
Emitter-Base Voltage
Collector Current – Continuous
Base Current – Continuous
Total Device Dissipation
Junction Temperature
@ TC = 25°
Derate above 25°
Storage Temperature
Value
100
60
70
7
100
7
15
7
115
0.657
200
-65 to +200
Unit
V
V
V
V
V
V
A
A
W
W/°C
°C
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJC
Thermal Resistance, Junction to Case
31/10/2012
COMSET SEMICONDUCTORS
Value
1.52
Unit
°C/W
1|3
Datasheet pdf - http://www.DataSheet4U.co.kr/



2N3055
2N3055
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VCEO(SUS)
BVCER
Collector-Emitter Sustaining Voltage
(*)
Collector-Emitter Breakdown
Voltage (*)
IC=200 mA, IB=0
IC=200 mA, RBE=100
ICEO Collector-Emitter Current
CVE=30 V, IB=0
ICEX Collector Cutoff Current
VCE=100 V, VEB(off)=1.5 V
IEBO Emitter Cutoff Current
VBE=7.0 V, IC=0
hFE DC Current Gain
IC=4.0 A, IB=4.0 Adc
VCE(SAT) Collector-Emitter saturation Voltage IC=4.0 A, IB=0.4 2Adc
VBE Base-Emitter Voltage
hfe Small Signal Current Gain
fαe
Small Signal Current Gain Cutoff
Frequency
VCER(SUS) Collector-Emitter Sustaining Voltage
Is/b
Second Breakdown Collector
Current
In accordance with JEDEC Registration Data
(*) Pulse Width 300 µs, Duty Cycle 2.0%
IC=4.0 A, VCE=4.0 V
VCE=4.0 V, IC=1.0 A
f=1.0 kHz
www.DataSheet.net/
VCE=4.0 V, IC=1.0 A
f=1.0 kHz
IC=0.2 A, IB=0 A
RBE= 100
t=1 S (non repetitive)
Min Typ Max Unit
60 - - V
70 - - V
- - 0.7 MA
- - 5.0 mA
- - 5.0 mA
20 - 70
- - 1.1 V
- 1.8 -
V
15 - 120 -
10 -
- kHz
60 - - V
1.95 - - A
31/10/2012
COMSET SEMICONDUCTORS
2|3
Datasheet pdf - http://www.DataSheet4U.co.kr/





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