2N3866A TRANSISTORS Datasheet

2N3866A Datasheet, PDF, Equivalent


Part Number

2N3866A

Description

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Manufacture

Advanced Power Technology

Total Page 5 Pages
Datasheet
Download 2N3866A Datasheet


2N3866A
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
2N3866 / 2N3866A
Features
Silicon NPN, To-39 packaged VHF/UHF Transistor
Specified 400 MHz, 28Vdc Characteristics
- Output Power = 1.0 Watt
- Minimum Gain = 10 dB
- Efficiency = 45%
800 MHz Current-Gain Bandwidth Product
1. Emitter
2. Base
3. Collector
TO-39
DESCRIPTION:
Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and
output stages. Also suitable for oscillator and frequency-multiplier functions.
www.DataSheet.net/
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
Thermal Data
P
D
Total Device Dissipation
Derate above 25º C
Value
30
55
3.5
400
5.0
28.6
Unit
Vdc
Vdc
Vdc
mA
Watts
mW/ º C
2N3866.PDF 10-28-02
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Datasheet pdf - http://www.DataSheet4U.co.kr/

2N3866A
2N3866 / 2N3866A
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol
Test Conditions
BVCER
BVCEO
BVCBO
BVEBO
ICEO
ICEX
(on)
HFE
VCE(sat)
Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, RBE = 10 ohms)
Collector-Emitter Sustaining Voltage
(IC=5.0 mAdc, IB=0)
Collector-Base Breakdown Voltage
(IE = 0, IC = 0.1 mAdc)
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 28 Vdc, IB = 0)
Collector Cutoff Current
(VCE = 55 Vdc, VBE = 1.5 Vdc)
DC Current Gain
(IC = 360 mAdc, VCE = 5.0 Vdc) Both
(IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866
(IC = 50 mAdc, VCE = 5.0 Vdc) 2N3866A
Collector-Emitter Saturation Voltage
(IC = 100 mAdc, IB = 20 mAdc)
www.DataSheet.net/
Min.
55
30
55
3.5
-
-
Value
Typ.
-
-
-
-
-
-
Max.
-
-
-
-
20
100
Unit
Vdc
Vdc
Vdc
Vdc
µA
µA
5.0 -
-
10 - 200
25 - 200
-
-
-
- - 1.0 Vdc
DYNAMIC
Symbol
Test Conditions
fT
COB
Current-Gain - Bandwidth Product
(IC = 50 mAdc, VCE = 15 Vdc, f = 200 MHz)
Output Capacitance
(VCB = 30 Vdc, IE = 0, f = 1.0 MHz)
2N3866
2N3866A
Min.
500
800
-
Value
Typ.
800
-
2.8
Max.
-
-
3.5
2N3866.PDF 10-28-02
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Unit
MHz
pF
Datasheet pdf - http://www.DataSheet4U.co.kr/


Features 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF T ransistor Specified 400 MHz, 28Vdc Char acteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45 % 800 MHz Current-Gain Bandwidth Produc t • 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN trans istor, designed for VHF and UHF equipme nt. Applications include amplifier; pre -driver, driver, and output stages. Als o suitable for oscillator and frequency -multiplier functions. www.DataSheet.ne t/ ABSOLUTE MAXIMUM RATINGS (Tcase = 2 5°C) Symbol VCEO VCBO VEBO IC Paramete r Collector-Emitter Collector-Base Volt age Emitter-Base Voltage Collector Curr ent Value 30 55 3.5 400 Unit Vdc Vdc Vd c mA Thermal Data P D Total Device Dis sipation Derate above 25º C 5.0 28.6 W atts mW/ º C 2N3866.PDF 10-28-02 Adv anced Power Technology reserves the rig ht to change, without notice, the speci fications and information contained herein Visit our website at WWW.ADVA.
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