2N5671

  NPN 2N5671 – 2N5672 HIGH CURRENT FAST SWITCHING APPLICATIONS The 2N5671 and 2N5672 are silicon multiepitaxial planer NPN transistors in Jedec TO-3. They are especially intended for high current, fast switching industrial applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO VCEX VCER IC IB PD TJ TStg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Collector Current Base Current Total Device Dissipation @ TC = 25° Junction Temperature Storage Temperature VEB = -1.5V REB = 50 Ω REB <= 50 Ω www.DataSheet.net/ Ratings 2N5671 2N5672 2N5671 2N5672 2N5671 2N5672 2N5671 2N5672 2N5671 2N5672 2N5671 2N5672 2N5671 2N5672 2N5671 2N5672 2N5671 2N5672 2N5671 2N5672 Value 90 120 120 150 7.0 120 150 110 140 30 10 140 200 -65 to +200 Unit V V V V V A A W °C °C THERMAL CHARACTERISTICS Symbol RthJC Ratings Thermal Resistance, Junction to Case COMSET SEMICONDUCTORS Value 1.25 Unit °C/W 1|4 09/11/2012   Datasheet pdf - http://www.DataSheet4U.co.kr/   NPN 2N5671 – 2N5672 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(SUS) VCER(SUS) VCEX(SUS) ICEO Ratings Collector-Emitter Sustaining Voltage (*) Collector-Emitter Sustaining Voltage (*) Collector-Emitter Sustaining Voltage (*) Collector Cutoff Current Test Condition(s) IC=200 mA, IB=0 IC=0.2 A, RBE=50Ω IC=0.2 A , VBE=-1.5V RBE=50Ω VCE=80 V VCE=110 V, VEB=-1.5 V VCE=135 V, VEB=-1.5 V VCE=100 V, VEB=-1.5 V TC=1...