2N5680

2N5679 – 2N5680 PNP SWITCHING TRANSISTORS The 2N5679 and 2N5680 are silicon expitaxial planar PNP transistors in jedec TO-39 metal case. They are intended for use as drivers for high power transistors in general purpose, amplifier and switching circuit. The complementary NPN types are the 2N5681 and 2N5682 . Compliance to RoHS. C B E ABSOLUTE MAXIMUM RATINGS Value 25679 IB =0 IE =0 IC =0 www.DataSheet.net/ Symbol VCEO VCBO VEBO IC IB PD TJ TStg Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation Junction Temperature Storage Temperature range 2N5680 -120 -120 Unit V V V A mA W °C -100 -100 -4 -1 -500 1 10 200 -65 to +150 Tamb = 25°C Tcase = 25°C THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-c Ratings Thermal Resistance, Junction to ambient Thermal Resistance, Junction to case Value 175 17.5 Unit °C/W °C/W COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.DataSheet4U.co.kr/ 2N5679 – 2N5680 ELECTRICAL CHARACTERISTICS Tj=25°C unless otherwise specified Symbol ICBO ICEO Ratings Collector Cutoff Current Collector Cutoff Current Test Condition(s) Min 2N5679 2N5680 2N5679 2N5680 2N5679 2N5680 2N5679 2N5680 -100 -120 40 5 30 40 - Typ - Mx -1 -10 -1 Unit µA µA µA ICEV Collector Cutoff Current VCB = -100 V, IE = 0 VCB = -120 V, IE = 0 VCE = -70 V, IB = 0 VCE = -80 V, IB = 0 VCE = -100 V, VBE = 1.5 V VCE = -120 V, VBE = 1.5 V VCE = -100 V, VBE = 1.5 V TC = 150°C VCE = -120 V, VBE =...