PNP 2N6050 – 2N6051 – 2N6052 POWER COMPLEMENTARY SILICON TRANSISTORS
The 2N6050, 2N6051 and 2N6052 are silicon epitaxial...
PNP 2N6050 – 2N6051 – 2N6052 POWER COMPLEMENTARY SILICON
TRANSISTORS
The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base
transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary
NPN types are 2N6057, 2N6058 and 2N6059 respectively. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol
VCBO Collector-Base Voltage
Ratings
IE=0
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Value
2N6050 2N6051 2N6052 2N6050 2N6051 2N6052 2N6050 2N6051 2N6052 -60 -80 -100 -60 -80 -100 -60 -80 -100 -5.0 -12 -20 -200 150 200 -65 to +200
Unit
V
VCEO
Collector-EmitterVoltage
IB=0
V
VCEX VEBO IC ICM IB PT TJ Ts
Collector-EmitterVoltage Emitter-Base Voltage Collector Current Collector Peak Current Base Current Power Dissipation Junction Temperature Storage Temperature
VBE= 1.5 V IC=0
V V A A mA W °C
@ TC < 25°
THERMAL CHARACTERISTICS Symbol
RthJ-C
Ratings
Thermal Resistance, Junction to Case
Value
1.17
Unit
°C/W
17/10/2012
COMSET SEMICONDUCTORS
1|3
Datasheet pdf - http://www.DataSheet4U.co.kr/
PNP 2N6050 – 2N6051 – 2N6052
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VCE= VCEX =-60 V, VBE=1.5 V VCE= VCEX =-80 V, VBE=1.5 V VCE= VCEX =-100 V VBE=1.5 V VCE= VCEX =-60 V, VBE=1.5 V TC=150°C VCE= VCEX =-80 V, VBE=1.5 V TC=150°C VCE= VCEX =-100 V VBE=1.5 V, TC=150°C VCE=-30 Vdc, IB=0 VCE=-40 Vdc, IB=0 VCE=-50 Vdc, IB=0 VEB=-5 V
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