2N6055

NPN 2N6055 POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6055 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary PNP types are 2N6053. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC ICM IB PT TJ Ts Collector-Base Voltage Collector-EmitterVoltage Emitter-Base Voltage Collector Current Collector Peak Current Base Current Power Dissipation Junction Storage Temperature Ratings IE=0 IB=0 IC=0 www.DataSheet.net/ Value 2N6055 2N6055 60 60 5.0 8 16 120 100 200 -65 to +200 Unit V V V A A mA W °C @ TC < 25° THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case Value 1.17 Unit °C/W 17/10/2012 COMSET SEMICONDUCTORS 1|3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN 2N6055 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Collector Cutoff Current Test Condition(s) VCE= VCEX =60 V, VBE=-1.5 V VCE= VCEX =60 V, VBE=-1.5 V TC=150°C 2N6055 2N6055 2N6055 2N6055 2N6055 Min 60 Typ - MAx Unit 500 5 0.5 2.0 µA mA mA mA V ICEX ICEO IEBO VCEO(SUS) Collector Cutoff VCE=30 Vdc, IB=0 Current Emitter Cutoff VEB=5 V Current Collector-Emitter Sustaining Voltage IC=0.1 A (*) Collector-Emitter saturation Voltage (*) IC=4 A, IB=16 mA www.DataSheet.net/ 2N6055 - - 2.0 V VCE(SAT) IC=8 A, IB=80 mA 2N6055 - - 3.0 VBE(SAT) Base-Emitter Saturatio...