2N6057

NPN 2N6057 – 2N6058 – 2N6059 POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6057, 2N6058 and 2N6059 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary PNP types are 2N6050, 2N6051 and 2N6052 respectively. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO Collector-Base Voltage Ratings IE=0 www.DataSheet.net/ Value 2N6050 2N6051 2N6052 2N6050 2N6051 2N6052 2N6050 2N6051 2N6052 60 80 100 60 80 100 60 80 100 5.0 12 20 200 150 200 -65 to +200 Unit V VCEO Collector-EmitterVoltage IB=0 V VCEX VEBO IC ICM IB PT TJ Ts Collector-EmitterVoltage Emitter-Base Voltage Collector Current Collector Peak Current Base Current Power Dissipation Junction Temperature Storage Temperature VBE= 1.5 V IC=0 V V A A mA W °C @ TC < 25° THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case Value 1.17 Unit °C/W 17/10/2012 COMSET SEMICONDUCTORS 1|3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN 2N6057 – 2N6058 – 2N6059 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) VCE= VCEX =60 V, VBE=-1.5 V VCE= VCEX =80 V, VBE=-1.5 V VCE= VCEX =100 V VBE=-1.5 V VCE= VCEX =60 V, VBE=-1.5 V TC=150°C VCE= VCEX =80 V, VBE=-1.5 V TC=150°C VCE= VCEX =100 V VBE=-1.5 V, TC=150°C VCE=30 Vdc, IB=0 VCE=40 Vdc, IB=0 VCE=50 Vdc, IB=0 VEB=5 V www.DataSheet.net/ Min 2N6...