2N6250

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/510 Devices 2N6249 2N6250 2N6251 Qualified Level JAN JANTX JANTXV JANHC MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Temp Range Symbol 2N6249 2N6250 VCEO VCBO VEBO IC IB PT Top, Tstg 200 300 275 375 6.0 10 5.0 5.5 175 -55 to +200 Max. 1.0 2N6251 350 450 Units Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W www.DataSheet.net/ THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance, Junction-to-Case RθJC 1) Derate linearly at 34.2 mW/0C for TA > +250C 2) Derate linearly at 1.0 W/0C for TC > +250C 0 TO-3 (TO-204AA)* *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc; L = 42 mH; F = 30-60 Hz (See Figure 3 of MIL-PRF-19500/510) 2N6249 2N6250 2N6251 V(BR)CEO 200 275 350 Vdc Collector-Emitter Breakdown Voltage IC = 200 mAdc; L = 14 mH; F = 30-60 Hz; RBE = 50Ω (See Figure 3 of MIL-PRF-19500/510) 2N6249 2N6250 2N6251 Emitter-Base Cutoff Current VEB = 6 Vdc Collector-Emitter Cutoff Current VCE = 150 Vdc 2N6249 VCE = 225 Vdc 2N6250 VCE = 300 Vdc 2N6251 V(BR)CER 225 300 375 100 1.0 1.0 1.0 Vdc IEBO µAdc ICEO mAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 6...