2N6254

NPN 2N6253 – 2N6254 – 2N6371 HIGH POWER SILICON NPN TRANSISTORS The 2N6253, 2N6254, and 2N6371 are silicon transistors are mounted in TO-3 metal package. Tey are intended for a wide variety of high-power applications. The construction of these devices renders them highly resistant to second breakdown over a wide range of operating conditions. These devices differ in maximum ratings for voltage and power dissipation. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO(SUS) Collector-Emitter Voltage Ratings 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 2N6253 2N6254 2N6371 Value Unit www.DataSheet.net/ VCBO Collector-Base Voltage (*) Collector-Emitter Voltage RBE=100Ω Collector-Emitter Voltage VBE=-1.5V Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature < 25°C > 25°C VCER(SUS) VCEV(SUS) VEBO IC IB PTOT TJ TS 2N6253 2N6254 2N6371 45 V 80 40 55 V 100 50 55 85 V 45 55 90 V 50 5 7 V 5 15 A 7 A 115 Watts 150 117 Derate Linearly to 200°C -65 to +200 °C 09/11/2012 COMSET SEMICONDUCTORS 1|4 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN 2N6253 – 2N6254 – 2N6371 THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case 2N6253 2N6254 2N6371 Value 1.5 1.17 1.5 Unit °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IC=3 A, IB=0.3 A IC=15 A, IB=5 A IC=5 A, IB=0.5 A IC=15 A, IB=3 A IC=8 A, IB=...