2N6283

2N6282 – 2N6283 – 2N6284 NPN SILICON DARLINGTON POWER TRANSISTOR The 2N6282, 2N6283 and 2N6284 are mounted in TO-3 metal package. They are designed for use in general–purpose amplifier and low–frequency switching applications. The complementary PNP are 2N6285, 2N6286, 2N6287 Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO Ratings Collector-Emitter Voltage (IB=0) 2N6282 2N6283 2N6284 2N6282 2N6283 2N6284 2N6282 2N6283 2N6284 2N6282 2N6283 2N6284 2N6282 2N6283 2N6284 2N6282 2N6283 2N6284 2N6282 2N6283 2N6284 2N6282 2N6283 2N6284 2N6282 2N6283 2N6284 Value 60 80 100 60 80 100 5 Unit V VCBO Collector-Base Voltage (IE=0) www.DataSheet.net/ V VEBO Emitter-Base Voltage (IC=0) V IC Collector Current 20 A 40 ICM Collector Peak Current IB Base Current 0.5 A PT Power Dissipation @ TC = 25° 160 W/°C TJ Junction Temperature 200 °C TS Storage Temperature -65 to +200 °C 04/12/2012 COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.DataSheet4U.co.kr/ 2N6282 – 2N6283 – 2N6284 THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance Junction-Case Value 1.09 Unit °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Collector-Emitter Breakdown Voltage (*) Collector Cutoff Current Emitter Cutoff Current Test Condition(s) 2N6282 IC= 200 m A IB= 0 VCE= 30 V, IB= 0 VCE= 40 V, IB= 0 VCE= 50 V, IB= 0 2N6283 2N6284 Min 60 80 100 - Typ - Max 1 Unit VCEO(SUS) V ICEO IEBO ICEX Collector Cutoff Current VCE(SA...