2N6287

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2N6282/6283/6284 ·High DC current gain ·DARLINGTON APPLICATIONS ·For use in general-purpose amplifier and low-frequency switching applications PINNING PIN 1 2 3 Base Emitter DESCRIPTION 2N6285 2N6286 2N6287 Fig.1 simplified outline (TO-3) and symbol Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6285 VCBO Collector-base voltage 2N6286 2N6287 2N6285 VCEO Collector-emitter voltage 2N6286 2N6287 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base www.DataSheet.net/ CONDITIONS VALUE -60 -80 -100 -60 -80 -100 -5 -20 -40 -0.5 160 200 -65~200 UNIT Open emitter V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.09 UNIT /W Datasheet pdf - http://www.DataSheet4U.co.kr/ SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N6285 2N6286 2N6287 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6285 VCEO(SUS) Collector-emitter sustaining voltage 2N6286 2N6287 VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage 2N6285 ICEO Collector cut-off current 2N6286 2N6287 2N6285 ICEX Collector cut-off current 2...