2N6285 – 2N6286 – 2N6287 PNP DARLINGTON POWER SILICON TRANSISTOR
The 2N6285, 2N6286 and 2N6287 are mounted in TO-3 metal...
2N6285 – 2N6286 – 2N6287
PNP DARLINGTON POWER SILICON
TRANSISTOR
The 2N6285, 2N6286 and 2N6287 are mounted in TO-3 metal package. They are designed for use in general–purpose amplifier and low–frequency switching applications. The complementary
NPN are 2N6282, 2N6283, 2N6284 Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
Ratings
Collector-Emitter Voltage (IB=0) 2N6285 2N6286 2N6287 2N6285 2N6286 2N6287 2N6285 2N6286 2N6287 2N6285 2N6286 2N6287 2N6285 2N6286 2N6287 2N6285 2N6286 2N6287 2N6285 2N6286 2N6287 2N6285 2N6286 2N6287 2N6285 2N6286 2N6287
Value
-60 -80 -100 -60 -80 -100 -5
Unit
V
VCBO
Collector-Base Voltage (IE=0)
V
www.DataSheet.net/
VEBO
Emitter-Base Voltage (IC=0)
V
IC
Collector Current
-20 A -40
ICM
Collector Peak Current
IB
Base Current
-0.5
A
PT
Power Dissipation
@ TC = 25°
160
W/°C
TJ
Junction Temperature
200
°C
TS
Storage Temperature
-65 to +200
°C
04/12/2012
COMSET SEMICONDUCTORS
1/3
Datasheet pdf - http://www.DataSheet4U.co.kr/
2N6285 – 2N6286 – 2N6287
THERMAL CHARACTERISTICS Symbol
RthJ-C
Ratings
Thermal Resistance Junction-Case
Value
1.09
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Collector-Emitter Breakdown Voltage (*) Collector Cutoff Current Emitter Cutoff Current
Test Condition(s)
2N6285 IC= -200 m A IB= 0 VCE= -30 V, IB= 0 VCE= -40 V, IB= 0 VCE= -50 V, IB= 0
www.DataSheet.net/
Min
-60 -80 -100 -
Typ
-
Max
-1
Unit
VCEO(SUS)
2N6286 2N6287
V
ICEO
IEBO
...