2N6287

2N6285 – 2N6286 – 2N6287 PNP DARLINGTON POWER SILICON TRANSISTOR The 2N6285, 2N6286 and 2N6287 are mounted in TO-3 metal package. They are designed for use in general–purpose amplifier and low–frequency switching applications. The complementary NPN are 2N6282, 2N6283, 2N6284 Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO Ratings Collector-Emitter Voltage (IB=0) 2N6285 2N6286 2N6287 2N6285 2N6286 2N6287 2N6285 2N6286 2N6287 2N6285 2N6286 2N6287 2N6285 2N6286 2N6287 2N6285 2N6286 2N6287 2N6285 2N6286 2N6287 2N6285 2N6286 2N6287 2N6285 2N6286 2N6287 Value -60 -80 -100 -60 -80 -100 -5 Unit V VCBO Collector-Base Voltage (IE=0) V www.DataSheet.net/ VEBO Emitter-Base Voltage (IC=0) V IC Collector Current -20 A -40 ICM Collector Peak Current IB Base Current -0.5 A PT Power Dissipation @ TC = 25° 160 W/°C TJ Junction Temperature 200 °C TS Storage Temperature -65 to +200 °C 04/12/2012 COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.DataSheet4U.co.kr/ 2N6285 – 2N6286 – 2N6287 THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance Junction-Case Value 1.09 Unit °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Collector-Emitter Breakdown Voltage (*) Collector Cutoff Current Emitter Cutoff Current Test Condition(s) 2N6285 IC= -200 m A IB= 0 VCE= -30 V, IB= 0 VCE= -40 V, IB= 0 VCE= -50 V, IB= 0 www.DataSheet.net/ Min -60 -80 -100 - Typ - Max -1 Unit VCEO(SUS) 2N6286 2N6287 V ICEO IEBO ...