2SC4550

NPN 2SC4550 SILCON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4550 is a power transistor developed for high-speed switching and features low VCE(sat) and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of cost. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS www.DataSheet.net/ Symbol VCEO VCBO VEBO IC IC(pulse) IB PD PD TJ TStg Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector Current (pulse) Base Current Total Power Dissipation Total Power Dissipation Junction Temperature Storage Temperature @ TC = 25°C @ Ta = 25°C Value 60 100 7 7 14 3.5 30 2 150 -65 to +200 Unit V V V A A A W W °C °C 08/10/2012 COMSET SEMICONDUCTORS 1|3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN 2SC4550 hFE CLASSIFICATION Marking hFE2 Test Condition(s) IC = 1.5 A, VCE = 2 V M 100 to 200 L 150 to 300 K 200 to 400 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO VCEX ICBO ICER ICEX IEBO hFE VCE(SAT) VBE(SAT) Cob fT ton tstg tf Ratings Test Condition(s) Min 60 60 100 100 60 - Typ 200 100 150 0.1 1 0.1 Max 10 1 10 1 10 400 0.3 0.5 1.2 1.5 0.3 1.5 0.3 Unit Collector to Emitter Voltage IC = 4 A, IB = 0.4 A, L = 1 mH IC = 4 A, IB1 = -IB2 = 0.4 A Collector to Emitter Voltage VBE(OFF) = -1.5V, L = 180 µH clamped Collector Cutoff Current VCB = 60 V, ...