BC140

DISCRETE SEMICONDUCTORS DATA SHEET M3D110 www.DataSheet.net/ BC140; BC141 NPN medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 12 Datasheet pdf - http://www.DataSheet4U.co.kr/ Philips Semiconductors Product specification NPN medium power transistors FEATURES High current (max. 1 A) Low voltage (max. 60 V). APPLICATIONS General purpose switching and amplification. DESCRIPTION NPN medium power transistor in a TO-39 metal package. PNP complements: BC160 and BC161. 3 BC140; BC141 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION 1 handbook, halfpage 2 2 3 MAM317 1 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BC140 www.DataSheet.net/ CONDITIONS open emitter MIN. − − − − − TYP. − − − − − − 100 160 − MAX. 80 100 40 60 1.5 3.7 160 250 − UNIT V V V V A W BC141 VCEO collector-emitter voltage BC140 BC141 ICM Ptot hFE peak collector current total power dissipation DC current gain BC140-10; BC141-10 BC140-16; BC141-16 fT transition frequency IC = 50 mA; VCE = 10 V; f = 100 MHz Tcase ≤ 45 °C IC = 100 mA; VCE = 1 V open base − 63 100 50 MHz 1997 May 12 2 Datasheet pdf - http://www.DataSheet4U.co.kr/ Philips Semiconductors Product specification NPN medium power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BC140 BC141 VCEO collector-em...