2N6166
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2N6166 is Designed to operate in a collector modulated VHF ...
2N6166
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI 2N6166 is Designed to operate in a collector modulated VHF Power Amplifier Applications up to 200 MHz.
PACKAGE STYLE .500 4L FLG
.112x45° A FULL R L
E
C
Ø.125 NOM.
FEATURES:
ηC = 60 % min. @ 100 W/150 MHz PG = 6.0 dB min. @ 100 W/150 MHz Omnigold™ Metalization System
C B
B
E H D G F
E
I J
K
MAXIMUM RATINGS
IC VCBO VEBO PDISS TJ TSTG θJC 9.0 A 65 V 4.0 V 117 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 1.5 °C/W
DIM A B C D E F G H I J K L
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59 .125 / 3.18 .245 / 6.22 .720 / 18.28 .125 / 3.18 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .980 / 24.89
.230 / 5.84 .255 / 6.48 .7.30 / 18.54 .980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 1.050 / 26.67
ORDER CODE: ASI10790
CHARACTERISTICS
SYMBOL
BVCES BVCEO BVEBO ICES ICBO hFE COB PG ηC VCC = 28 V
TC = 25 °C
NONETEST CONDITIONS
IC = 200 mA IC = 200 mA IE = 10 Ma VCE = 30 V VCB = 30 V VCE = 5.0 V VCE = 28 V POUT = 100 W IC = 500 mA f = 1.0 MHz
MINIMUM TYPICAL MAXIMUM
65 35 4.0 5.0 30 5.0 130 6.0
UNITS
V V V mA mA --pF dB %
f = 150 MHz
60
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
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