POWER TRANSISTORS. BD132 Datasheet

BD132 Datasheet PDF, Equivalent


Part Number

BD132

Description

SILICON PLANAR EPITAXIAL POWER TRANSISTORS

Manufacture

Comset Semiconductors

Total Page 2 Pages
PDF Download
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BD132 Datasheet
PNP BD132
SILICON PLANAR EPITAXIAL POWER TRANSISTORS
The BD132 are PNP transistors mounted in Jedec TO-126 plastic package.
Medium power applications.
PNP complements are BD131
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
-VCEO
-VCBO
-VEBO
IC
IB
PT
TJ
TStg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base current (peak value)
Reverse base current (peak value)
Total power Dissipation
Junction Temperature
Storage Temperature
THERMAL CHARACTERISTICS
Value
45
45
4
-IC
-ICM
-IBM
-IBM
www.DataSheet.net/
@ Tmb = 60°C
3
6
0.5
0.5
15
150
-65 to +150
Unit
V
V
V
A
A
Watts
°C
°C
Symbol
Ratings
RthJ-mb Thermal Resistance, Junction to mouting base
Value
6
Unit
K/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
-ICBO
-IEBO
-VCE(SAT)
-VBE(SAT)
hFE
Collector cut-off current
IE=0 , -VCB=40 V
IE=0 , -VCB=40 V ,Tj= 150°C
Emitter cut-offcurrent
IC=0, -VEB=3 V
Collector-Emitter saturation -IC=0.5 A, -IB=50 mA
Voltage
-IC=2.0 A, -IB=200 mA
Base-Emitter saturation -IC=0.5 A, -IB=50 mA
Voltage
-IC=2.0 A, -IB=200 mA
DC Current Gain
-VCE=12 V, -IC=500m A
-VCE=1 V, -IC=2 A
Min Typ Max Unit
-
-
-
-
5
500
µA
- - 5 µA
-
-
-
-
0.3
1.2
V
-
-
-
-
0.7
1,5
V
40 -
-
20 -
-
18/10/2012
COMSET SEMICONDUCTORS
1|2
Datasheet pdf - http://www.DataSheet4U.co.kr/

BD132 Datasheet
PNP BD132
MECHANICAL DATA CASE TO-126
DIMENSIONS
min max
A 7.4
7.8
B 10.5
10.8
C 2.4
2.7
D 0.7
0.9
E 2.25 typ.
F 0.49
0.75
G 4.4 typ.
L 15.7 typ.
M 1.27 typ.
N 3.75 typ.
P 3.0
3.2
S 2.54 typ.
Pin 1 :
Pin 2 :
Pin 3 :
Emitter
Collector
Base
www.DataSheet.net/
Revised September 2012
         
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to
change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically
disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not
authorized for use as critical components in life support devices or systems.
 
www.comsetsemi.com
info@comsetsemi.com
18/10/2012
COMSET SEMICONDUCTORS
2|2
Datasheet pdf - http://www.DataSheet4U.co.kr/


Features Datasheet pdf PNP BD132 SILICON PLANAR EPITAXIAL POWER TRANSISTORS The BD132 are PNP transist ors mounted in Jedec TO-126 plastic pac kage. Medium power applications. PNP co mplements are BD131 Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol -VCEO -VCBO -VEBO IC IB PT TJ TStg Ratings Collector-Emitter Voltage Collector-Bas e Voltage Emitter-Base Voltage Collecto r Current Base current (peak value) Rev erse base current (peak value) Total po wer Dissipation Junction Temperature St orage Temperature -IC -ICM -IBM -IBM @ Tmb = 60°C Value 45 45 4 3 6 0.5 0.5 15 150 -65 to +150 Unit V V V A A Watt s °C °C www.DataSheet.net/ THERMAL CHARACTERISTICS Symbol RthJ-mb Ratings Thermal Resistance, Junction to moutin g base Value 6 Unit K/W ELECTRICAL C HARACTERISTICS TC=25°C unless otherwis e noted Symbol -ICBO -IEBO -VCE(SAT) - VBE(SAT) hFE Ratings Collector cut-off current Test Condition(s) Min 40 20 Typ - Max 5 500 5 0.3 1.2 0.7 1,5 - Unit µA µA V V IE=0 , -VCB=40 V IE=0 , -VCB=40 V ,Tj= 150°C Emitte.
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