(PDF) BD139 Datasheet PDF | Micro Commercial Components





BD139 Datasheet PDF

Part Number BD139
Description (BD135 - BD139) Power Transistors NPN Silicon
Manufacture Micro Commercial Components
Total Page 3 Pages
PDF Download Download BD139 Datasheet PDF

Features: Datasheet pdf MCC Micro Commercial Components TM    omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BD1 35 BD137 BD139  )HDWXUHV • • • • 0D[LPXP5DWLQJV Rating Coll ector-Emitter Voltage Lead Free Finish /RoHS Compliant (Note1) ("P" Suffix des ignates RoHS Compliant. See ordering in formation) Epoxy meets UL 94 V-0 flamma bility rating Moisure Sensitivity Level 1 DC Current Gain - hFE = 40 (Min) @IC = 150mAdc Complementary with BD136, BD 138, BD140 Symbol BD135 BD137 BD139 VCE O Value 45 60 80 45 60 80 5.0 1.5 0.5 1 .25 10 12.5 100 -55 to +150 10 100 Unit Vdc Power Transistors NPN Silicon 45, 60,80 Volts  A K N Collector-B ase Voltage BD135 BD137 BD139 Emitter-B ase Voltage Collector Current Base Curr ent Total Device Dissipation @TA=25 Der ate above 25 Total Device Dissipation @ TC=25 Derate above 25 Operating & Stora ge Temperature Range Maximum Thermal Re sistance Junction to Case Maximum Thermal Resistance Junction to Ambient .

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BD139 datasheet
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
BD135
BD137
BD139
)HDWXUHV
Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
DC Current Gain - hFE = 40 (Min) @IC = 150mAdc
Complementary with BD136, BD138, BD140
0D[LPXP5DWLQJV
Rating
Collector-Emitter Voltage
BD135
BD137
BD139
Collector-Base Voltage
BD135
BD137
BD139
Emitter-Base Voltage
Collector Current
Base Current
:Total Device Dissipation @TA=25
:Derate above 25
:Total Device Dissipation @TC=25
:Derate above 25
Operating & Storage Temperature Range
Maximum Thermal Resistance Junction to
Case
Maximum Thermal Resistance Junction to
Ambient Air
Symbol
VCEO
VCBO
VEBO
IC
IB
PD
PD
TJ, TSTG
R-&
R-$
Value
45
60
80
45
60
80
5.0
1.5
0.5
1.25
10
12.5
100
-55 to +150
10
100
Unit
Vdc
Vdc
Vdc
Adc
Adc
:Watt
mW/
Watt
::mW/
:/Wwww.DataSheet.net/
:/W
Power Transistors
NPN Silicon
45,60,80 Volts

AK
N
D
E
B

1 23


L
G
M
(OHFWULFDO &KDUDFWHULVWLFV #  °& 8QOHVV 2WKHUZLVH 6SHFLILHG
Symbol
Parameter
Min Max Units
2)) &+$5$&7(5,67,&6
BVCEO
Collector-Emitter Sustaining Voltage*
(IC=30mA,IB=0) BD135
BD137
BD139
45
60
80
Vdc
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(on)
Collector Cutoff Current
:(VCB=30Vdc, IE=0)
(VCB=30Vdc, IE=0, TC=125 )
Emitter Cutoff Current
(VBE=5.0Vdc, IC=0)
DC Current Gain*
(IC=5mAdc, VCE=2Vdc)
(IC=0.5Adc, VCE=2Vdc)
(IC=150mAdc, VCE=2Vdc)
Collector-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc)
Base-Emitter ON Voltage
(VCE=2V, IC=0.5A)
0.1 µAdc
10
10 µAdc
25
25
40 250
0.5 Vdc
1 Vdc
CLASSIFICATION OF HFE(3)
Rank
6
Range
40-100
10
63-160
16
100-250
*Pulse test: Pulse width 300 µsec, Duty cycle 2%
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7.
C
FQ










L
M
N
Q
J
PIN 1.
EMITTER
PIN 2.
COLLECTOR
PIN 3.
BASE
DIMENSIONS
 

0.291
0.417
0.602
4
0.118
0.026
0.046
 
0.307
0.433
0.618
1
0.126
0.034
0.054
0.090TYP
0.098
0.114
0.083
0.091
0.000
0.043
0.012
0.059
0.018
0.024


7.40
10.60
15.30
3.90
3.00
0.66
1.17
 
7.80
11.00
15.70
4.10
3.20
0.86
1.37
2.290TYP
2.50 2.90
2.10 2.30
0.00
1.10
0.30
1.50
0.45 0.60
 
www.mccsemi.com
Revision: A
1 of 3
2011/01/01
Datasheet pdf - http://www.DataSheet4U.co.kr/

BD139 datasheet
BD135
BD137
BD139
MCC
TM
Micro Commercial Components
10.0
5.0
2.0 5 ms
1.0
0.5 TJ = 125°C
0.5 ms
dc
0.1 ms
0.1
0.05
0.02
0.01
1
BD135
BD137
BD139
2
5 10 20
50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
80
Figure 1. Active–Region Safe Operating Area
www.DataSheet.net/
Revision: A
www.mccsemi.com
2 of 3
2011/01/01
Datasheet pdf - http://www.DataSheet4U.co.kr/





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