(PDF) BD139 Datasheet PDF | Savantic





BD139 Datasheet PDF

Part Number BD139
Description (BD135 - BD139) Silicon NPN Power Transistors
Manufacture Savantic
Total Page 3 Pages
PDF Download Download BD139 Datasheet PDF

Features: Datasheet pdf SavantIC Semiconductor Product Specific ation Silicon NPN Power Transistors DE SCRIPTION ·With TO-126 package ·High current ·Complement to type BD136/138/ 140 APPLICATIONS ·Driver stages in hig h-fidelity amplifiers and television ci rcuits PINNING PIN 1 2 3 Emitter Collec tor;connected to mounting base Base DES CRIPTION BD135 BD137 BD139 Absolute m aximum ratings (Ta=25 ) SYMBOL PARAMETE R BD135 VCBO Collector-base voltage BD1 37 BD139 BD135 VCEO Collector-emitter v oltage BD137 BD139 VEBO IC ICM IBM Pt T j Tstg Tamb Emitter -base voltage Colle ctor current (DC) Collector current-Pea k Base current-Peak Total power dissipa tion Junction temperature Storage tempe rature Operating ambient temperature Tm b670 Open collector Open base Open emit ter www.DataSheet.net/ CONDITIONS VAL UE 45 60 100 45 60 100 5 1.5 2 1 8 150 -65~150 -65~150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-mb PARAMETER Thermal resistance from junction to ambient Thermal resistance from junction to mounti.

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BD139 datasheet
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD135 BD137 BD139
DESCRIPTION
·With TO-126 package
·High current
·Complement to type BD136/138/140
APPLICATIONS
·Driver stages in high-fidelity amplifiers
and television circuits
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
BD135
VCBO
Collector-base voltage BD137
BD139
BD135
VCEO
Collector-emitter voltage BD137
BD139
VEBO
IC
ICM
IBM
Pt
Emitter -base voltage
Collector current (DC)
Collector current-Peak
Base current-Peak
Total power dissipation
Tj Junction temperature
Tstg
Tamb
Storage temperature
Operating ambient temperature
CONDITIONS
Open emitterwww.DataSheet.net/
Open base
Open collector
Tmb670
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Thermal resistance from junction to ambient
Rth j-mb
Thermal resistance from junction to mounting base
VALUE
45
60
100
45
60
100
5
1.5
2
1
8
150
-65~150
-65~150
UNIT
V
V
V
A
A
A
W
VALUE
100
10
UNIT
K/W
K/W
Datasheet pdf - http://www.DataSheet4U.co.kr/

BD139 datasheet
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BD135 BD137 BD139
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEsat Collector-emitter saturation voltage IC=0.5A; IB=50mA
0.5 V
VBE Base-emitter voltage
IC=500mA ; VCE=2V
1.0 V
ICBO Collector cut-off current
VCB=30V; IE=0
VCB=30V; IE=0 Tj=125
100 nA
10 µA
IEBO Emitter cut-off current
VEB=5V; IC=0
100 nA
hFE-1
hFE-2
hFE-3
DC current gain
DC current gain
BD135-10;BD137-10;BD139-10
BD135-16;BD137-16;BD139-16
DC current gain
IC=5mA ; VCE=2V
IC=150mA ; VCE=2V
IC=500mA ; VCE=2V
40
63
63
100
25
250
160
250
fT Transition frequency
www.DataSheet.net/
IC=50mA; VCE=5V ;f=100MHz
190
MHz
2
Datasheet pdf - http://www.DataSheet4U.co.kr/





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