(PDF) BD139 Datasheet PDF | Comset Semiconductors





BD139 Datasheet PDF

Part Number BD139
Description (BD135 - BD139) SILICON PLANAR EPITAXIAL POWER TRANSISTORS
Manufacture Comset Semiconductors
Total Page 3 Pages
PDF Download Download BD139 Datasheet PDF

Features: Datasheet pdf NPN BD135 – BD137 – BD139 SILICON PL ANAR EPITAXIAL POWER TRANSISTORS. The B D135-BD137-BD139 are NPN Transistors Th ey are recommended for driver stages in hi-fi amplifiers and television circui ts. They are mounted in Jedec TO-126 pl astic package. PNP complements are BD13 6-BD138-BD140. Compliance to RoHS ABSO LUTE MAXIMUM RATINGS Symbol VCBO Ratin gs Collector-Base Voltage (IE= 0) BD135 BD137 BD139 BD135 BD137 BD139 BD135 BD 137 BD139 IC ICM IB Tmb = 70°C Value 45 60 100 45 60 80 45 60 100 5 1.5 2 0. 5 8 150 -65 to +150 Unit V VCEO Coll ector-Emitter Voltage (IB= 0) www.DataS heet.net/ V VCER VEBO IC IB PT TJ TSt g Collector-Emitter Voltage (RBE= 1 k ) Emitter-Base Voltage (IC= 0) Collec tor Current Base current Total power Di ssipation Junction Temperature Storage Temperature V V A A W °C °C THERMAL CHARACTERISTICS Symbol RthJ-c RthJ-a Ratings Thermal Resistance, Junction-Ca se Thermal Resistance, Junction-ambient in free air Value 10 100 Unit °C/W °C/W 25/09/2012 27/08/201225/09/2.

Keywords: BD139, datasheet, pdf, Comset Semiconductors, BD135, -, BD139, SILICON, PLANAR, EPITAXIAL, POWER, TRANSISTORS, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

BD139 datasheet
NPN BD135 – BD137 – BD139
SILICON PLANAR EPITAXIAL POWER TRANSISTORS.
The BD135-BD137-BD139 are NPN Transistors
They are recommended for driver stages in hi-fi amplifiers and television circuits.
They are mounted in Jedec TO-126 plastic package.
PNP complements are BD136-BD138-BD140.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VCER
VEBO
IC
IB
PT
TJ
TStg
Ratings
Collector-Base Voltage (IE= 0)
Collector-Emitter Voltage (IB= 0)
www.DataSheet.net/
Collector-Emitter Voltage (RBE= 1 kΩ)
Emitter-Base Voltage (IC= 0)
Collector Current
Base current
Total power Dissipation
Junction Temperature
Storage Temperature
BD135
BD137
BD139
BD135
BD137
BD139
BD135
BD137
BD139
IC
ICM
IB
Tmb = 70°C
Value
45
60
100
45
60
80
45
60
100
5
1.5
2
0.5
8
150
-65 to +150
Unit
V
V
V
V
A
A
W
°C
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-c
RthJ-a
Thermal Resistance, Junction-Case
Thermal Resistance, Junction-ambient in free air
Value
10
100
Unit
°C/W
°C/W
25/09/2012
27/08/201225/09/2012
COMSET SEMICONDUCTORS
1|3
Datasheet pdf - http://www.DataSheet4U.co.kr/

BD139 datasheet
NPN BD135 – BD137 – BD139
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
BD135
- - 0,1
IE=0 , VCB= 30 V
BD137
- - 0,1
ICBO
Collector cut-off
current
IE=0 ,VCB = 30V
Tj= 125°C
BD139
BD135
BD137
BD139
-
-
-
-
0,1
10
µA
- - 10
- - 10
IEBO
VCEO(SUS)
Emitter cut-offcurrent
Collector-Emitter
sustaning Voltage (1)
IC=0, VEB=5 V
IB=0 , IC=30 mA
BD135
BD137
BD139
- - 10 µA
45 -
-
60 - - V
80 -
-
VCE(SAT)
Collector-Emitter
saturation Voltage (1)
IC=0.5 A,IB=50 mA
- - 0,5 V
VCE=2 V, IC=5 mA
25 -
-
BDxxx
40 - 250
hFE
DC Current Gain (1) VCE=2 V, IC=150 mA BDxxx -10 63
- 160
BDxxx -16 100 - 250
www.DataSheet.net/
VCE=2 V, IC=500 mA
25 -
-
VBE
Base-Emitter
Voltage(1)
VCE=2 V, IC=500 mA
- - 1V
fT
Transition frequency VCE=5 V, IC=50 mA , f= 35 MHz
- 250 - MHz
1. Measured under pulse conditions :tP <300µs, δ <2%.
25/09/2012
27/08/201225/09/2012
COMSET SEMICONDUCTORS
2|3
Datasheet pdf - http://www.DataSheet4U.co.kr/





Index : 0  1  2  3   4  5  6  7   8  9  A  B   C  D  E  F   G  H  I  J   K  L  M  N   O  P  Q  R   S  T  U  V   W  X  Y  Z
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)