BD142 NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS
LF Large Signal Power Amplification Low Saturation...
BD142
NPN SILICON
TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS
LF Large Signal Power Amplification Low Saturation Voltage High Dissipation Rating Intended for a wide variety of intermediate-power applications. It is especially suited for use in audio and inverter circuits at 12 volts. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO VCBO VEBO VCEX IC IB PT TJ TS Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector-Emitter Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature
Ratings
Value
45 50 7 50 15 7 117 -65 to +200
Unit
V V V V A A Watts °C
VBE=-1.5 V
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@ TC = 25°
THERMAL CHARACTERISTICS Symbol
RthJ-C
Ratings
Thermal Resistance, Junction to Case
Value
1.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VCEO(BR) VCEX(BR) VCE(SAT) ICEX IEBO VBE IS/B hFE
Ratings
Collector-Emitter Breakdown Voltage (*) Collector-Emitter Breakdown Voltage (*) Collector-Emitter Saturation Voltage (*) Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Base-Emitter Voltage (*) Second Breakdown collector current Static Forward Current Transfer Ratio (*)
Test Condition(s)
IC=200 mA, IB=0 IC=100 mA, VBE=-1.5 V IC=4 A, IB=0.4 A VCE= 40 V, VBE=-1.5 V VEB=7 V IC=4.0 A, VCE=4.0V t=1s, VCE=39 V VCE=4.0 V, IC=4.0 A VCE=4.0 V, IC=0.5 A
Min
45 50 3 12.5 20
Typ
Max
Unit
V V V mA mA V A -
-
1.1 2 1 1.5 160 1/2
(*) Pulse Width ≈ 300 µs, Duty Cycle ...
