NPN BD239 – A – B – C MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS.
The BD239, A, B, C are mounted in Jedec TO-220 pla...
NPN BD239 – A – B – C MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS.
The BD239, A, B, C are mounted in Jedec TO-220 plastic package. They are the silicon epitaxial-base Power
Transistors for use in medium power linear and switching applications. The
PNP complements are BD240, A, B, C. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol Ratings
BD239 BD239A BD239B BD239C BD239 BD239A BD239B BD239C BD239 BD239A BD239B BD239C
Value
45 60 80 100 55 70 90 115 45 60 80 100 5.0 3 7 0.5 30 30 150 -65 to +150
Unit
VCEO
Collector-Emitter Voltage
www.DataSheet.net/
V
VCER
Collector-Emitter Voltage (RBE = 100 Ω)
V
VCBO VEBO IC IB PT TJ TS
Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature @ Tamb = 25° C @ Tcase = 25° C IC ICM
V V A A W W °C
THERMAL CHARACTERISTICS Symbol
RthJ-amb RthJ-case
Ratings
Thermal Resistance, Junction-ambient Thermal Resistance, Junction-case
Value
70 4.17
Unit
°C/W °C/W
22/10/2012
COMSET SEMICONDUCTORS
1/3
Datasheet pdf - http://www.DataSheet4U.co.kr/
NPN BD239 – A – B – C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VCE=30 V VCE=30 V VCE=60 V VCE=60 V
Min
45 60 80 100 40
Typ
-
Max
Unit
ICEO
IEBO
ICES
VCEO(sus)
hFE
VCE(SAT)
VBE(on)
hfe
fT
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% 22/10/2012
BD239 BD239A Collector Cutoff Current BD239B BD239C BD239 BD239A Emitter Cutoff Current VBE=5 V BD239B BD2...