BD244C

BD244 – A – B – C SILICON PNP POWER TRANSISTORS The BD244 series are PNP power transistors in a TO-220 envelope. They are intended for use in medium power linear and switching applications. The complementary is BD243, A, B, C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO Ratings Collector-Emitter Voltage (IB= 0mA) BD244 BD244A BD244B BD244C BD244 BD244A BD244B BD244C Value -45 -60 -80 -100 -45 -60 -80 -100 -5.0 -6 -10 -2 65 150 -65 to +150 Unit V www.DataSheet.net/ VCBO VEBO IC ICM IB PT TJ TS Collector-Base Voltage (IE= 0mA) Emitter-Base Voltage(IC= 0mA) Collector Current Collector Current-Peak Base Current Collector Power Dissipation Junction Temperature Storage Temperature V V A A W °C TC = 25° C THERMAL CHARACTERISTICS Symbol RthJC RthJA Ratings Junction to Case Thermal Resistance Junction to free air Thermal Resistance Value 1.92 62.5 Unit °C / W °C / W 25/09/2012 COMSET SEMICONDUCTORS 1/3 Datasheet pdf - http://www.DataSheet4U.co.kr/ BD244 – A – B – C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings VCE VCE VCE VCE Test Condition(s) Min Typ Max Unit ICES Collector- Emitter Cutoff Current = -45 V , VBE = 0 = -60 V , VBE = 0 = -80 V , VBE = 0 = -100 V , VBE = 0 ICEO IEBO VCEO Collector Cut-off Current VCE = -30 V , IB = 0 VCE = -60 V , IB = 0 BD244 BD244A BD244B BD244C BD244 BD244A BD244B BD244C BD244 BD244A BD244B BD244C - - -0.4 mA -45 -60 -80 -100 30 15 - - -0.7 -1 -1 -1.6 mA mA V Emitter Cut-o...