BD246, A, B, C PNP SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS
The BD246 series are PNP power transistors in a TO3PN ...
BD246, A, B, C
PNP SINGLE-DIFFUSED MESA SILICON POWER
TRANSISTORS
The BD246 series are
PNP power
transistors in a TO3PN envelope. They are the power
transistors for power amplifier and high-speed-switching applications. The complementary is BD245, A, B, C Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO
Ratings
Collector-Emitter Voltage (IC = -30mA) BD246 BD246A BD246B BD246C BD246 BD246A BD246B BD246C IC ICM Tmb = 25° C
Value
-45 -60 -80 -100 -55 -70 -90 -115 -5.0 -10 -15 -3 80 -65 to +150 -65 to +150
Unit
V
www.DataSheet.net/
VCER VEBO IC IB PT TJ TS
Collector-Emitter Voltage (RBE = 100 Ω) Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature
V V A A Watts °C
THERMAL CHARACTERISTICS Symbol
RthJC RthJA
Ratings
Junction to Case Thermal Resistance Junction to free air Thermal Resistance
Value
1.56 42
Unit
°C / W °C / W
25/09/2012
COMSET SEMICONDUCTORS
1/3
Datasheet pdf - http://www.DataSheet4U.co.kr/
BD246, A, B, C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
ICES
Ratings
Collector- Emitter Cut-off Current VCE VCE VCE VCE
Test Condition(s)
Min
-
Typ
-
Mx
-0.4
Unit
mA
= -55 V , VBE = 0 = -70 V , VBE = 0 = -90 V , VBE = 0 = -115 V , VBE = 0
ICEO
Collector Cut-off Current Emitter Cut-off Current Collector- Emitter Breakdown Voltage (*)
VCE = -30 V , IB = 0 VCE = -60 V , IB = 0 VE B = -5 V , IC = 0
BD246 BD246A BD246B BD246C BD246 BD246A BD246B BD246C
-
-
-0.7
mA
...