BD246, A, B, C PNP SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS
The BD246 series are PNP power transistors in a TO3PN envelope. They are the power transistors for power amplifier and high-speed-switching applications. The complementary is BD245, A, B, C Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO
Ratings
Collector-Emitter Voltage (IC = -30mA) BD246 BD246A BD246B BD246C BD246 BD246A BD246B BD246C IC ICM Tmb = 25° C
Value
-45 -60 -80 -100 -55 -70 -90 -115 -5.0 -10 -15 -3 80 -65 to +150 -65 to +150
Unit
V
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VCER VEBO IC IB PT TJ TS
Collector-Emitter Voltage (RBE = 100 Ω) Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature
V V A A Watts °C
THERMAL CHARACTERISTICS Symbol
RthJC RthJA
Ratings
Junction to Case Thermal Resistance Junction to free air Thermal Resistance
Value
1.56 42
Unit
°C / W °C / W
25/09/2012
COMSET SEMICONDUCTORS
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Datasheet pdf - http://www.DataSheet4U.co.kr/
BD246, A, B, C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
ICES
Ratings
Collector- Emitter Cut-off Current VCE VCE VCE VCE
Test Condition(s)
Min
-
Typ
-
Mx
-0.4
Unit
mA
= -55 V , VBE = 0 = -70 V , VBE = 0 = -90 V , VBE = 0 = -115 V , VBE = 0
ICEO
Collector Cut-off Current Emitter Cut-off Current Collector- Emitter Breakdown Voltage (*)
VCE = -30 V , IB = 0 VCE = -60 V , IB = 0 VE B = -5 V , IC = 0
BD246 BD246A BD246B BD246C BD246 BD246A BD246B BD246C
-
-
-0.7
mA
IEBO
BD246 BD246A BD246B BD246C -45 -60 -80 -100 40 20 4 20 3
-
-1 -1 -4 -1.6 -3 -
mA
VCEO
IC = -30 mA, IB = 0
V
hFE VCE(SAT) VBE hfe |hfe|
VCE = -4 V, IC = -1 A DC Current Gain (*) VCE = -4 V, I C= -3 A VCE = -4 V, IC = -10 A IC = -3 A, IB = -300 mA Collector-Emitter saturation Voltage (*) IC = -10 A, IB = -2.5 A VCE = -4 V, IC = -3 A Base-Emitter Voltage(*) VCE = -4 V, IC = -10 A Small Signal forward V = -10 V, IC = -500 mA, f = 1MHz Current Transfer ratio CE Small Signal forward V = -10 V, IC = -500 mA, f = 1MHz Current Transfer ratio CE
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V V
-
RESISTIVE-LOAD-SWITCHING CHARACTERISTICS AT 25°C CASE TEMPERATURE Symbol Ratings
Test Condition(s)
Min
Typ
Mx
Unit
Turn-on Time ton
toff
Turn-off Time
IC = -1 A , IB(on) = -100 mA , IB(off) = 100 mA VBE(off) = 3.7 V , RL = 20 Ω , tp = 20 µs dc < 2% IC = -1 A , IB(on) = -100 mA , IB(off) = 100 mA VBE(off) = 3.7 V , RL = 20 Ω , tp = 20 µs dc < 2%
COMSET SEMICONDUCTORS
-
0.2
-
µs
-
0.8
-
25/09/2012
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Datasheet pdf - http://www.DataSheet4U.co.kr/
BD246, A, B, C
MECHANICAL DATA CASE TO3PN Non Isolated Plastic Package
DIMENSIONS (mm)
Min. A B C D E F G H J K L M N O P R S T 15.20 1.90 4.60 3.10 Max. 1600 2.10 5.00 3.30 9.60 2.00 0.55 1.40 5.55 20.20 1.25 2.00 3.00 4.00 4.00 1.80 5.20
0.35 5.35 20.00 19.60 0.95
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4.80
Pin 1 : Pin 2 : Pin 3 :
Base Collector Emitter
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems.
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25/09/2012 COMSET SEMICONDUCTORS
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