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POWER TRANSISTOR. BD410 Datasheet

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POWER TRANSISTOR. BD410 Datasheet






BD410 TRANSISTOR. Datasheet pdf. Equivalent




BD410 TRANSISTOR. Datasheet pdf. Equivalent





Part

BD410

Description

NPN EPITAXIAL SILICON POWER TRANSISTOR



Feature


SEMICONDUCTORS BD410 NPN EPITAXILA SILI CON POWER TRANSISTORS They are silicon epitaxial planar NPN power transistors mounted in a TO-126 plastic package. AF -amplifier for high supply voltage They are intended for control circuit, vert ical output stages in TVsets, and gener al purpose applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC.
Manufacture

Comset Semiconductors

Datasheet
Download BD410 Datasheet


Comset Semiconductors BD410

BD410; ICM PT tJ ts tL Collector-Base Voltage Ratings Value 500 www.DataSheet.net/ Unit V V V A A W Collector-Emitter Vo ltage Emitter-Base Voltage Collector Cu rrent Collector Peak Current Total Powe r Dissipation Junction Temperature Stor age Temperature range 325 5 1 1.5 Ta = 25°C Tc =25°C 1.25 20 -55 to +125 -55 to +125 260 °C Lead Temperature 1.6 mm From Case For 10 .


Comset Semiconductors BD410

Secondes 25/09/2012 05/11/2012 COMSET SEMICONDUCTORS 1/3 Datasheet pdf - ht tp://www.DataSheet4U.co.kr/ SEMICONDUC TORS BD410 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO VCBO VEBO ICES VCE(SAT) VBE hFE Ratings Collector-Emitter Breakdown Vol tage (*) Collector-Base Breakdown Volta ge Collector-Base Breakdown Voltage Col lector Cutoff Curre.


Comset Semiconductors BD410

nt Collector-Emitter saturation Voltage (*) Base-Emitter Voltage (*) DC Current Gain (*) Test Condition(s) Min 325 5 00 5 25 30 20 Typ - Max 100 0.5 1.5 2 40 - Unit V V V µA V V - IC= 10 mA, IB= 0 IC= 0.5 mA, IE= 0 IE= 50 µA, IC= 0 VCE = 300 V, IB= 0 IC= 100 mA, IB= 1 0 mA IC= 100 mA, IB= 10 mA IC= 5 mA, VC E= 10 V IC= 50 mA, VCE= 10 V IC= 100 mA , VCE= 10 V www.Data.

Part

BD410

Description

NPN EPITAXIAL SILICON POWER TRANSISTOR



Feature


SEMICONDUCTORS BD410 NPN EPITAXILA SILI CON POWER TRANSISTORS They are silicon epitaxial planar NPN power transistors mounted in a TO-126 plastic package. AF -amplifier for high supply voltage They are intended for control circuit, vert ical output stages in TVsets, and gener al purpose applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC.
Manufacture

Comset Semiconductors

Datasheet
Download BD410 Datasheet




 BD410
SEMICONDUCTORS
BD410
NPN EPITAXILA SILICON POWER TRANSISTORS
They are silicon epitaxial planar NPN power transistors mounted in a TO-126 plastic package.
AF-amplifier for high supply voltage
They are intended for control circuit, vertical output stages in TVsets, and general purpose
applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
VCBO
VCEO
VEBO
IC
ICM
PT
tJ
ts
tL
Collector-Base Voltage
500
Collector-Emitter Voltage
www.DataSheet.net/
325
Emitter-Base Voltage
5
Collector Current
1
Collector Peak Current
Total Power Dissipation
Junction Temperature
Ta =25°C
Tc =25°C
1.5
1.25
20
-55 to +125
Storage Temperature range
-55 to +125
Lead Temperature 1.6 mm From Case For 10 Secondes
260
Unit
V
V
V
A
A
W
°C
25/09/2012
05/11/2012
COMSET SEMICONDUCTORS
1/3
Datasheet pdf - http://www.DataSheet4U.co.kr/




 BD410
SEMICONDUCTORS
BD410
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VCEO
VCBO
VEBO
ICES
VCE(SAT)
VBE
hFE
Collector-Emitter
Breakdown Voltage (*)
Collector-Base
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cutoff Current
Collector-Emitter
saturation Voltage (*)
IC= 10 mA, IB= 0
IC= 0.5 mA, IE= 0
IE= 50 µA, IC= 0
VCE = 300 V, IB= 0
IC= 100 mA, IB= 10 mA
Base-Emitter Voltage (*) IC= 100 mA, IB= 10 mA
DC Current Gain (*)
IC= 5 mA, VCE= 10 V
I = 50 mA, V = 10 VC
www.DataSheet.net/
CE
IC= 100 mA, VCE= 10 V
SWITCHING TIMES.
Min Typ Max Unit
325 - - V
500 - - V
5- -V
- - 100 µA
- - 0.5 V
- - 1.5 V
25 -
-
30 - 240 -
20 -
-
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
Cobo
Output Capacitance
IE= 0, VCB= 10 V, f= 1 MHz
- 5.5
Cibo
Input Capacitance
IE= 0, VCB= 0.5 V, f= 1 MHz
- 90
(*) These parameters must be measured using pulse techniques, tp 300 µs, Duty Cycle 2%
-
-
pF
25/09/2012
05/11/2012
COMSET SEMICONDUCTORS
2/3
Datasheet pdf - http://www.DataSheet4U.co.kr/




 BD410
SEMICONDUCTORS
BD410
MECHANICAL DATA CASE TO-126
DIMENSIONS
min max
A 7.4
7.8
B 10.5
10.8
C 2.4
2.7
D 0.7
0.9
E 2.25 typ.
F 0.49
0.75
G 4.4 typ.
L 15.7 typ.
M 1.27 typ.
N 3.75 typ.
P 3.0
3.2
S 2.54 typ.
Pin 1 :
Pin 2 :
Pin 3 :
Emitter
Collector
Base
www.DataSheet.net/
Revised August 2012
         
 
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
 
 
www.comsetsemi.com
info@comsetsemi.com
25/09/2012
05/11/2012
COMSET SEMICONDUCTORS
3/3
Datasheet pdf - http://www.DataSheet4U.co.kr/



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