SEMICONDUCTORS
BD410 NPN EPITAXILA SILICON POWER TRANSISTORS
They are silicon epitaxial planar NPN power transistors mo...
SEMICONDUCTORS
BD410
NPN EPITAXILA SILICON POWER
TRANSISTORS
They are silicon epitaxial planar
NPN power
transistors mounted in a TO-126 plastic package. AF-amplifier for high supply voltage They are intended for control circuit, vertical output stages in TVsets, and general purpose applications. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO VCEO VEBO IC ICM PT tJ ts tL Collector-Base Voltage
Ratings
Value
500
www.DataSheet.net/
Unit
V V V A A W
Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Total Power Dissipation Junction Temperature Storage Temperature range
325 5 1 1.5 Ta =25°C Tc =25°C 1.25 20 -55 to +125 -55 to +125 260
°C
Lead Temperature 1.6 mm From Case For 10 Secondes
25/09/2012 05/11/2012
COMSET SEMICONDUCTORS
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Datasheet pdf - http://www.DataSheet4U.co.kr/
SEMICONDUCTORS
BD410
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VCEO VCBO VEBO ICES VCE(SAT) VBE hFE
Ratings
Collector-Emitter Breakdown Voltage (*) Collector-Base Breakdown Voltage Collector-Base Breakdown Voltage Collector Cutoff Current Collector-Emitter saturation Voltage (*) Base-Emitter Voltage (*) DC Current Gain (*)
Test Condition(s)
Min
325 500 5 25 30 20
Typ
-
Max
100 0.5 1.5 240 -
Unit
V V V µA V V -
IC= 10 mA, IB= 0 IC= 0.5 mA, IE= 0 IE= 50 µA, IC= 0 VCE = 300 V, IB= 0 IC= 100 mA, IB= 10 mA IC= 100 mA, IB= 10 mA IC= 5 mA, VCE= 10 V IC= 50 mA, VCE= 10 V IC= 100 mA, VCE= 10 V
www.DataSheet.net/
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