BD435

NPN BD433 – BD435 – BD437 SILICON NPN POWER TRANSISTORS. The BD433-BD435-BD437 are NPN Transistors mounted in Jedec TO-126 plastic package. They are recommended for use in medium power linear and switching applications. PNP complements are BD434-BD436-BD438. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO Ratings Collector-Base Voltage (IE= 0) BD433 BD435 BD437 BD433 BD435 BD437 www.DataSheet.net/ Value 22 32 45 22 32 45 5 4 7 1 36 150 -65 to +150 Unit V VCEO VEBO IC ICM IB PC TJ TStg Collector-Emitter Voltage (IB= 0) Emitter-Base Voltage (Ic= 0) Collector Current Collector Current Peak Base Current Total power Dissipation Junction Temperature Storage Temperature V V A A W °C °C TC = 25°C THERMAL CHARACTERISTICS Symbol RthJ-c RthJ-a Ratings Thermal Resistance, Junction-Case Thermal Resistance, Junction-ambient in free air Value 3.5 100 Unit °C/W °C/W 25/09/2012 COMSET SEMICONDUCTORS 1|3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN BD433 – BD435 – BD437 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Collector cut-off current Collector cut-off current Emitter cut-offcurrent Collector-Emitter sustaning Voltage (*) Collector-Emitter saturation Voltage (*) Base-Emitter Voltage(*) Test Condition(s) IE= 0, VCB= 22 V IE= 0, VCB= 32 V IE= 0, VCB= 45 V VBE= 0, VCE= 22 V VBE= 0, VCE= 32 V VBE= 0, VCE= 45 V IC= 0 VEB= 5 V IB= 0 IC= 100 mA IC= 2 A IB= 200 mA www.DataSheet.net/ Min Typ Max Unit ICBO ICES IEBO VCEO(SUS) VCE...