NPN BD433 – BD435 – BD437 SILICON NPN POWER TRANSISTORS.
The BD433-BD435-BD437 are NPN Transistors mounted in Jedec TO-1...
NPN BD433 – BD435 – BD437 SILICON
NPN POWER
TRANSISTORS.
The BD433-BD435-BD437 are
NPN Transistors mounted in Jedec TO-126 plastic package. They are recommended for use in medium power linear and switching applications.
PNP complements are BD434-BD436-BD438. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol VCBO Ratings Collector-Base Voltage (IE= 0) BD433 BD435 BD437 BD433 BD435 BD437
www.DataSheet.net/
Value 22 32 45 22 32 45 5 4 7 1 36 150 -65 to +150
Unit V
VCEO VEBO IC ICM IB PC TJ TStg
Collector-Emitter Voltage (IB= 0) Emitter-Base Voltage (Ic= 0) Collector Current Collector Current Peak Base Current Total power Dissipation Junction Temperature Storage Temperature
V V A A W °C °C
TC = 25°C
THERMAL CHARACTERISTICS Symbol
RthJ-c RthJ-a
Ratings
Thermal Resistance, Junction-Case Thermal Resistance, Junction-ambient in free air
Value
3.5 100
Unit
°C/W °C/W
25/09/2012
COMSET SEMICONDUCTORS
1|3
Datasheet pdf - http://www.DataSheet4U.co.kr/
NPN BD433 – BD435 – BD437
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings Collector cut-off current Collector cut-off current Emitter cut-offcurrent Collector-Emitter sustaning Voltage (*) Collector-Emitter saturation Voltage (*) Base-Emitter Voltage(*)
Test Condition(s) IE= 0, VCB= 22 V IE= 0, VCB= 32 V IE= 0, VCB= 45 V VBE= 0, VCE= 22 V VBE= 0, VCE= 32 V VBE= 0, VCE= 45 V IC= 0 VEB= 5 V IB= 0 IC= 100 mA IC= 2 A IB= 200 mA
www.DataSheet.net/
Min
Typ
Max
Unit
ICBO
ICES
IEBO
VCEO(SUS)
VCE...