2N6199

2N6199 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N6199 is Designed for VHF Class C Power Amplifier Applications up to 250 MHz. PACKAGE STYLE .380" 4L STUD .112x45° A B C E ØC FEATURES: PG = 10 dB Typical at 25 W/175 MHz ∞ Load VSWR at Rated Conditions Omnigold™ Metallization System D E B H I J #8-32 UNC-2A F E G MAXIMUM RATINGS IC VCB PDISS TJ TSTG θJC 4.0 A 65 V 40 W @ TC = 25 °C -55 °C to +200 °C -55 °C to +150 °C 4.4 °C/W DIM A B C D E F G H I J MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94 .230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05 ORDER CODE: ASI10864 CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICBO hFE Cob PG ηc TC = 25 °C TEST CONDITIONS IC = 200 mA IC = 200 mA IE = 10 mA VCB = 30 V VCE = 5.0 V VCB = 28 V VCE = 28 V POUT = 25 W IC = 200 mA f = 1.0 MHz f = 175 MHz MINIMUM TYPICAL MAXIMUM 65 35 4.0 2.0 10 50 8.5 50 10 60 UNITS V V V mA --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV.A 1/1 ...