BD645

SEMICONDUCTORS BD643 – 645 – 647 – 649 – 651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BD644, BD646, BD648, BD650 and BD652 Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 Value 60 80 100 120 140 45 60 80 100 120 Unit VCBO Collector-Base Voltage www.DataSheet.net/ V VCEO Collector-Emitter Voltage V VEBO Emitter-Base Voltage 5 V IC Collector Current 8 A ICM Collector Peak Current 12 A 17/10/2012 COMSET SEMICONDUCTORS 1|5 Datasheet pdf - http://www.DataSheet4U.co.kr/ SEMICONDUCTORS BD643 – 645 – 647 – 649 – 651 ABSOLUTE MAXIMUM RATINGS Symbol Ratings BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 Value Unit IB Base Current 300 mA PT Power Dissipation @ Tmb < 25° 62.5 Watts TJ Junction Temperature 150 °C -65 to +150 www.DataSheet.net/ Ts Storage Temperature range Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL CHARACTERISTICS Symbol RthJ-MB RthJ-A Ratings From junction to mounting base From junction to ambient in free air Value 2 62.5 Unit K...