BD646

SEMICONDUCTORS BD644 – 646 – 648 – 650 – 652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. NPN complements are BD643, BD645, BD647, BD649 and BD651 Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 Value 45 60 80 100 120 45 60 80 100 120 Unit -VCBO Collector-Base Voltage www.DataSheet.net/ V -VCEO Collector-Emitter Voltage V -VEBO Emitter-Base Voltage 5 V -IC Collector Current 8 A -ICM Collector Peak Current 12 A 18/10/2012 COMSET SEMICONDUCTORS 1|5 Datasheet pdf - http://www.DataSheet4U.co.kr/ SEMICONDUCTORS BD644 – 646 – 648 – 650 – 652 ABSOLUTE MAXIMUM RATINGS Symbol Ratings BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 Value Unit -IB Base Current 150 mA PT Power Dissipation @ Tmb < 25° 62.5 Watts TJ Junction Temperature 150 °C -65 to +150 www.DataSheet.net/ Ts Storage Temperature range Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL CHARACTERISTICS Symbol RthJ-MB RthJ-A Ratings From junction to mounting base From junction to ambient in free air Value 2 70 ...