SEMICONDUCTORS
BD743 – A – B – C SILICON POWER TRANSISTORS
The BD743 series are NPN power transistors in a TO-220 envel...
SEMICONDUCTORS
BD743 – A – B – C SILICON POWER
TRANSISTORS
The BD743 series are
NPN power
transistors in a TO-220 envelope. They are intended for use in power linear and switching application. High current capability and high power dissipation.
PNP complements are BD744-A-B-C Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C BD743 BD743A BD743B BD743C TC = 25°C TA = 25°C
Value
50 70 900 110 45 60 80 100 5
Unit
VCBO
Collector-Base Voltage (IE=0)
V
www.DataSheet.net/
VCEO
Collector-Emitter Voltage (IB=0)
V
VEBO
Emitter-Base Voltage (IC=0)
V
IC
Collector Current
15
A
ICM
Collector Peak Current
20
A
IB
Base Current
5 90 2 150 -65 to +150
A
PT TJ Ts
Power Dissipation Junction Temperature Storage Temperature range
W °C
25/09/2012
COMSET SEMICONDUCTORS
1|4
Datasheet pdf - http://www.DataSheet4U.co.kr/
SEMICONDUCTORS
BD743 – A – B – C
THERMAL CHARACTERISTICS Symbol
RthJ-MB RthJ-A
Ratings
Junction To Case Thermal Resistance Junction To Free Air Thermal Resistance
Value
1.4 62.5
Unit
°C/W °C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
Typ
Max
Unit
ICBO
Collector Cutoff Current
ICEO
Collector Cutoff Current
VBE= 0 VCB = 50 V VBE= 0 VCB = 70 V VBE= 0 VCB = 90 V VBE= 0 VCB = 100 V VBE= 0 VCB = 50 V VBE= 0 VCB = 70 V VBE= 0 VCB = 90 V VBE= 0 V...